SPRSP35K February 2019 – April 2024 DRA829J , DRA829J-Q1 , DRA829V , DRA829V-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The PCIe interfaces are compliant with the electrical parameters specified in PCI Express® Base Specification Revision 4.0, September 27, 2017.
This Device imposes an additional limit on SERDES REFCLK when used in Input mode with internal termination enabled, as described by parameter VREFCLK_TERM in Table 6-2, 4-L-PHY SERDES REFCLK Electrical Characteristics. Internal termination is enabled by default and must be disabled before applying a reference clock signal that exceeds the limits defined by VREFCLK_TERM. External termination should always be enabled on the source side.
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
BALL NAMES in Mode 0: SERDES4_REFCLK_P, SERDES4_REFCLK_N | |||||
BALL NUMBERS:E8 / E7 | |||||
VREFCLK_TERM | Single ended voltage threshold at the reference clock pin when internal termination is enabled | 400 | mV | ||
RTERM | Internal termination | 40 | 50 | 62.5 | Ω |
The SerDes USB interfaces are compliant with the USB3.1 SuperSpeed Transmitter and Receiver Normative Electrical Parameters as defined in the Universal Serial Bus 3.1 Specification, Revision 1.0 , July 26, 2013.
The SGMII interfaces electrical characteristics are compliant with 1000BASE-KX per IEEE802.3 Clause 70.
The SGMII 2.5G / XAUI interfaces electrical characteristics are compliant with IEEE802.3 Clause 47.
The QSGMII interface electrical characteristics are compliant with QSGMII Specification revision 1.2.
This Device imposes an additional limit on the 2-L-PHY SERDES REFCLK, as described by parameters VIDTH and VIDTL in Table 6-3, 2-L-PHY SERDES REFCLK Electrical Characteristics.
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
BALL NAMES in Mode 0: PCIE_REFCLK[3:0]P, PCIE_REFCLK[3:0]N | |||||
BALL NUMBERS:AE9 / AD10 / AE11 / AD12 / AE14 / AD15 / AE17 / AD16 | |||||
VIDTH | Input Differential high-level threshold | 200 | mV | ||
VIDTL | Input Differential low-level threshold | –200 | mV |