SPRSP35K February 2019 – April 2024 DRA829J , DRA829J-Q1 , DRA829V , DRA829V-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
BALL NAMES in Mode 0: MCU_PORz, PORz | ||||||
BALL NUMBERS:H23 / J24 | ||||||
VIL | Input low-level threshold | 0.3 × VDDSHV(1) | V | |||
VILSS | Input low-level threshold steady state | 0.3 × VDDSHV(1) | V | |||
VIH | Input high-level threshold | 0.7 × VDDSHV(1) | V | |||
VIHSS | Input high-level threshold steady state | 0.7 × VDDSHV(1) | V | |||
VHYS | Input Hysteresis Voltage | 200 | mV | |||
IIN | Input Leakage Current | VI = 1.8 V or 0 V | ±10 | µA |