SLOS919D June   2016  – November 2023 DRV2510-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input and Configurable Pre-amplifier
      2. 7.3.2 Pulse-Width Modulator (PWM)
      3. 7.3.3 Designed for low EMI
      4. 7.3.4 Device Protection Systems
        1. 7.3.4.1 Diagnostics
          1. 7.3.4.1.1 Load Diagnostics
        2. 7.3.4.2 Faults During Load Diagnostics
        3. 7.3.4.3 Protection and Monitoring
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation in Shutdown Mode
      2. 7.4.2 Operation in Standby Mode
      3. 7.4.3 Operation in Active Mode
    5. 7.5 Programming
      1. 7.5.1 General I2C Operation
      2. 7.5.2 Single-Byte and Multiple-Byte Transfers
      3. 7.5.3 Single-Byte Write
      4. 7.5.4 Multiple-Byte Write and Incremental Multiple-Byte Write
      5. 7.5.5 Single-Byte Read
      6. 7.5.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1 Address: 0x01
      2. 7.6.2 Address: 0x02
      3. 7.6.3 Address: 0x03
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Single-Ended Source
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Optional Components
          2. 8.2.1.2.2 Capacitor Selection
          3. 8.2.1.2.3 Solenoid Selection
          4. 8.2.1.2.4 Output Filter Considerations
        3. 8.2.1.3 Application Curves
        4. 8.2.1.4 Differential Input Diagram
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.