SLOS919D June   2016  – November 2023 DRV2510-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input and Configurable Pre-amplifier
      2. 7.3.2 Pulse-Width Modulator (PWM)
      3. 7.3.3 Designed for low EMI
      4. 7.3.4 Device Protection Systems
        1. 7.3.4.1 Diagnostics
          1. 7.3.4.1.1 Load Diagnostics
        2. 7.3.4.2 Faults During Load Diagnostics
        3. 7.3.4.3 Protection and Monitoring
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation in Shutdown Mode
      2. 7.4.2 Operation in Standby Mode
      3. 7.4.3 Operation in Active Mode
    5. 7.5 Programming
      1. 7.5.1 General I2C Operation
      2. 7.5.2 Single-Byte and Multiple-Byte Transfers
      3. 7.5.3 Single-Byte Write
      4. 7.5.4 Multiple-Byte Write and Incremental Multiple-Byte Write
      5. 7.5.5 Single-Byte Read
      6. 7.5.6 Multiple-Byte Read
    6. 7.6 Register Map
      1. 7.6.1 Address: 0x01
      2. 7.6.2 Address: 0x02
      3. 7.6.3 Address: 0x03
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Single-Ended Source
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Optional Components
          2. 8.2.1.2.2 Capacitor Selection
          3. 8.2.1.2.3 Solenoid Selection
          4. 8.2.1.2.4 Output Filter Considerations
        3. 8.2.1.3 Application Curves
        4. 8.2.1.4 Differential Input Diagram
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5.3 Single-Byte Write

As shown in Figure 7-5, a single-byte data-write transfer begins with the master device transmitting a start condition followed by the I2C device address and the read-write bit. The read-write bit determines the direction of the data transfer. For a write-data transfer, the read-write bit must be set to 0. After receiving the correct I2C device address and the read-write bit, the DRV2510-Q1 responds with an acknowledge bit. Next, the master transmits the register byte corresponding to the DRV2510-Q1 internal-memory address that is accessed. After receiving the register byte, the device responds again with an acknowledge bit. Finally, the master device transmits a stop condition to complete the single-byte data-write transfer.

GUID-56108FD6-49BA-4BC1-90C7-1500AF93B726-low.gif Figure 7-5 Single-Byte Write Transfer