SLOS866F May   2014  – March 2018 DRV2604L

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Setup for Graphs
      1. 7.1.1 Default Test Conditions
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Support for ERM and LRA Actuators
      2. 8.3.2  Smart-Loop Architecture
        1. 8.3.2.1 Auto-Resonance Engine for LRA
        2. 8.3.2.2 Real-Time Resonance-Frequency Reporting for LRA
        3. 8.3.2.3 Automatic Switch to Open-Loop for LRA
        4. 8.3.2.4 Automatic Overdrive and Braking
          1. 8.3.2.4.1 Startup Boost
          2. 8.3.2.4.2 Brake Factor
          3. 8.3.2.4.3 Brake Stabilizer
        5. 8.3.2.5 Automatic Level Calibration
          1. 8.3.2.5.1 Automatic Compensation for Resistive Losses
          2. 8.3.2.5.2 Automatic Back-EMF Normalization
          3. 8.3.2.5.3 Calibration Time Adjustment
          4. 8.3.2.5.4 Loop-Gain Control
          5. 8.3.2.5.5 Back-EMF Gain Control
        6. 8.3.2.6 Actuator Diagnostics
        7. 8.3.2.7 Automatic Re-Synchronization
      3. 8.3.3  Open-Loop Operation for LRA
      4. 8.3.4  Open-Loop Operation for ERM
      5. 8.3.5  Flexible Front-End Interface
        1. 8.3.5.1 PWM Interface
        2. 8.3.5.2 Internal Memory Interface
          1. 8.3.5.2.1 Waveform Sequencer
          2. 8.3.5.2.2 Library Parameterization
        3. 8.3.5.3 Real-Time Playback (RTP) Interface
        4. 8.3.5.4 Analog Input Interface
        5. 8.3.5.5 Input Trigger Option
          1. 8.3.5.5.1 I2C Trigger
          2. 8.3.5.5.2 Edge Trigger
          3. 8.3.5.5.3 Level Trigger
        6. 8.3.5.6 Noise Gate Control
      6. 8.3.6  Edge Rate Control
      7. 8.3.7  Constant Vibration Strength
      8. 8.3.8  Battery Voltage Reporting
      9. 8.3.9  One-Time Programmable (OTP) Memory for Configuration
      10. 8.3.10 Low-Power Standby
      11. 8.3.11 I2C Watchdog Timer
      12. 8.3.12 Device Protection
        1. 8.3.12.1 Thermal Protection
        2. 8.3.12.2 Overcurrent Protection of the Actuator
        3. 8.3.12.3 Overcurrent Protection of the Regulator
        4. 8.3.12.4 Brownout Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power States
        1. 8.4.1.1 Operation With VDD < 2 V (Minimum VDD)
        2. 8.4.1.2 Operation With VDD > 5.5 V (Absolute Maximum VDD)
        3. 8.4.1.3 Operation With EN Control
        4. 8.4.1.4 Operation With STANDBY Control
        5. 8.4.1.5 Operation With DEV_RESET Control
        6. 8.4.1.6 Operation in the Active State
      2. 8.4.2 Changing Modes of Operation
      3. 8.4.3 Operation of the GO Bit
      4. 8.4.4 Operation During Exceptional Conditions
        1. 8.4.4.1 Operation With No Actuator Attached
        2. 8.4.4.2 Operation With a Non-Moving Actuator Attached
        3. 8.4.4.3 Operation With a Short at REG Pin
        4. 8.4.4.4 Operation With a Short at OUT+, OUT–, or Both
    5. 8.5 Programming
      1. 8.5.1 Auto-Resonance Engine Programming for the LRA
        1. 8.5.1.1 Drive-Time Programming
        2. 8.5.1.2 Current-Dissipation Time Programming
        3. 8.5.1.3 Blanking Time Programming
        4. 8.5.1.4 Zero-Crossing Detect-Time Programming
      2. 8.5.2 Automatic-Level Calibration Programming
        1. 8.5.2.1 Rated Voltage Programming
        2. 8.5.2.2 Overdrive Voltage-Clamp Programming
      3. 8.5.3 I2C Interface
        1. 8.5.3.1 General I2C Operation
        2. 8.5.3.2 Single-Byte and Multiple-Byte Transfers
        3. 8.5.3.3 Single-Byte Write
        4. 8.5.3.4 Multiple-Byte Write and Incremental Multiple-Byte Write
        5. 8.5.3.5 Single-Byte Read
        6. 8.5.3.6 Multiple-Byte Read
      4. 8.5.4 Programming for Open-Loop Operation
        1. 8.5.4.1 Programming for ERM Open-Loop Operation
        2. 8.5.4.2 Programming for LRA Open-Loop Operation
      5. 8.5.5 Programming for Closed-Loop Operation
      6. 8.5.6 Auto Calibration Procedure
      7. 8.5.7 Programming On-Chip OTP Memory
      8. 8.5.8 Waveform Playback Programming
        1. 8.5.8.1 Data Formats for Waveform Playback
          1. 8.5.8.1.1 Open-Loop Mode
          2. 8.5.8.1.2 Closed-Loop Mode, Unidirectional
          3. 8.5.8.1.3 Closed-Loop Mode, Bidirectional
        2. 8.5.8.2 Waveform Setup and Playback
          1. 8.5.8.2.1 Waveform Playback Using RTP Mode
          2. 8.5.8.2.2 Waveform Playback Using the Analog-Input Mode
          3. 8.5.8.2.3 Waveform Playback Using PWM Mode
          4. 8.5.8.2.4 Loading Data to RAM
            1. 8.5.8.2.4.1 Header Format
            2. 8.5.8.2.4.2 RAM Waveform Data Format
          5. 8.5.8.2.5 Waveform Sequencer
          6. 8.5.8.2.6 Waveform Triggers
    6. 8.6 Register Map
      1. 8.6.1  Status (Address: 0x00)
        1. Table 3. Status Register Field Descriptions
      2. 8.6.2  Mode (Address: 0x01)
        1. Table 4. Mode Register Field Descriptions
      3. 8.6.3  Real-Time Playback Input (Address: 0x02)
        1. Table 5. Real-Time Playback Input Register Field Descriptions
      4. 8.6.4  HI_Z (Address: 0x03)
        1. Table 6. HI_Z Register Field Descriptions
      5. 8.6.5  Waveform Sequencer (Address: 0x04 to 0x0B)
        1. Table 7. Waveform Sequencer Register Field Descriptions
      6. 8.6.6  GO (Address: 0x0C)
        1. Table 8. GO Register Field Descriptions
      7. 8.6.7  Overdrive Time Offset (Address: 0x0D)
        1. Table 9. Overdrive Time Offset Register Field Descriptions
      8. 8.6.8  Sustain Time Offset, Positive (Address: 0x0E)
        1. Table 10. Sustain Time Offset, Positive Register Field Descriptions
      9. 8.6.9  Sustain Time Offset, Negative (Address: 0x0F)
        1. Table 11. Sustain Time Offset, Negative Register Field Descriptions
      10. 8.6.10 Brake Time Offset (Address: 0x10)
        1. Table 12. Brake Time Offset Register Field Descriptions
      11. 8.6.11 Rated Voltage (Address: 0x16)
        1. Table 13. Rated Voltage Register Field Descriptions
      12. 8.6.12 Overdrive Clamp Voltage (Address: 0x17)
        1. Table 14. Overdrive Clamp Voltage Register Field Descriptions
      13. 8.6.13 Auto-Calibration Compensation Result (Address: 0x18)
        1. Table 15. Auto-Calibration Compensation-Result Register Field Descriptions
      14. 8.6.14 Auto-Calibration Back-EMF Result (Address: 0x19)
        1. Table 16. Auto-Calibration Back-EMF Result Register Field Descriptions
      15. 8.6.15 Feedback Control (Address: 0x1A)
        1. Table 17. Feedback Control Register Field Descriptions
      16. 8.6.16 Control1 (Address: 0x1B)
        1. Table 18. Control1 Register Field Descriptions
      17. 8.6.17 Control2 (Address: 0x1C)
        1. Table 19. Control2 Register Field Descriptions
      18. 8.6.18 Control3 (Address: 0x1D)
        1. Table 20. Control3 Register Field Descriptions
      19. 8.6.19 Control4 (Address: 0x1E)
        1. Table 21. Control4 Register Field Descriptions
      20. 8.6.20 Control5 (Address: 0x1F)
        1. Table 22. Control5 Register Field Descriptions
      21. 8.6.21 LRA Open Loop Period (Address: 0x20)
        1. Table 23. LRA Open Loop Period Register Field Descriptions
      22. 8.6.22 V(BAT) Voltage Monitor (Address: 0x21)
        1. Table 24. V(BAT) Voltage-Monitor Register Field Descriptions
      23. 8.6.23 LRA Resonance Period (Address: 0x22)
        1. Table 25. LRA Resonance-Period Register Field Descriptions
      24. 8.6.24 RAM-Address Upper Byte (Address: 0xFD)
        1. Table 26. RAM-Address Upper-Byte Register Field Descriptions
      25. 8.6.25 RAM-Address Lower Byte (Address: 0xFE)
        1. Table 27. RAM Address Lower Byte Register Field Descriptions
      26. 8.6.26 RAM Data Byte (Address: 0xFF)
        1. Table 28. RAM-Data Byte Register Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Actuator Selection
          1. 9.2.2.1.1 Eccentric Rotating-Mass Motors (ERM)
          2. 9.2.2.1.2 Linear Resonance Actuators (LRA)
            1. 9.2.2.1.2.1 Auto-Resonance Engine for LRA
        2. 9.2.2.2 Capacitor Selection
        3. 9.2.2.3 Interface Selection
        4. 9.2.2.4 Power Supply Selection
      3. 9.2.3 Application Curves
    3. 9.3 Initialization Setup
      1. 9.3.1 Initialization Procedure
      2. 9.3.2 Typical Usage Examples
        1. 9.3.2.1 Play a Waveform or Waveform Sequence from the RAM Waveform Memory
        2. 9.3.2.2 Play a Real-Time Playback (RTP) Waveform
        3. 9.3.2.3 Play a PWM or Analog Input Waveform
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Trace Width
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resource
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.2 ESD Ratings

VALUE UNIT
9-PIN DSBGA PACKAGE
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(3) ±250
10-PIN VSSOP PACKAGE
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 OUT+, OUT– pins(2) ±500 V
Other pins(1) ±1000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(3) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±1000 V may actually have higher performance.
(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±250 V may actually have higher performance.