SLVSHE3 June 2024 DRV2911-Q1
PRODUCTION DATA
The DRV2911-Q1 device consists of an integrated 95mΩ (combined high-side and low-side FET's on-state resistance) NMOS FETs connected in two half-bridge configurations. A doubler charge pump provides the proper gate-bias voltage to the high-side NMOS FETs across a wide operating voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs. The device has three PVDD power-supply pins which are to be connected to the supply voltage.