SLVSEE3D November   2017  – June 2024 DRV3245Q-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Device and Documentation Support
    1. 4.1 Device Support
      1. 4.1.1 Device Nomenclature
    2. 4.2 Documentation Support
      1. 4.2.1 Related Documentation
    3. 4.3 Receiving Notification of Documentation Updates
    4. 4.4 Support Resources
    5. 4.5 Trademarks
    6. 4.6 Electrostatic Discharge Caution
    7. 4.7 Glossary
  6. 5Revision History
  7. 6Mechanical, Packaging, and Orderable Information
    1. 6.1 Package Option Addendum
    2. 6.2 Tape and Reel Information
    3. 6.3 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.6 Electrostatic Discharge Caution

DRV3245Q-Q1 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.