SLVSDD5 August 2017 DRV5012
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Power supply voltage | VCC | –0.3 | 5.5 | V | |
Power supply voltage slew rate | VCC | Unlimited | V / µs | ||
Output voltage | OUT | –0.3 | VCC + 0.3 | V | |
Output current | OUT | –5 | 5 | mA | |
Input voltage | SEL | –0.3 | VCC + 0.3 | V | |
Magnetic flux density, BMAX | Unlimited | T | |||
Junction temperature, TJ | 105 | °C | |||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±6000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VCC | Power supply voltage (VCC) | 1.65 | 5.5 | V |
VO | Output voltage (OUT) | 0 | VCC | V |
IO | Output current (OUT) | –5 | 5 | mA |
VI | Input voltage (SEL) | 0 | VCC | V |
TA | Operating ambient temperature | –40 | 85 | °C |
THERMAL METRIC(1) | DRV5012 | UNIT | |
---|---|---|---|
DMR (X2SON) | |||
4 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 159 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 77 | °C/W |
RθJB | Junction-to-board thermal resistance | 102 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 100 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
OUT pin | |||||||
VOH | High-level output voltage | IOUT = –1 mA | VCC – 0.35 | VCC – 0.1 | V | ||
VOL | Low-level output voltage | IOUT = 1 mA | 0.1 | 0.3 | V | ||
SEL pin | |||||||
VIH | High-level input voltage | VCC = 1.65 to 2.5 V | 0.8 × VCC | V | |||
VCC = 2.5 to 5.5 V | 2 | ||||||
VIL | Low-level input voltage | 0.15 × VCC | V | ||||
IIH | High-level input leakage current | SEL = VCC | 1 | nA | |||
IIL | Low-level input leakage current | SEL = 0 V | 1 | nA | |||
DYNAMIC CHARACTERISTICS | |||||||
fS | Frequency of magnetic sampling | SEL = Low | 13.3 | 20 | 37 | Hz | |
SEL = High | 1665 | 2500 | 4700 | ||||
tS | Period of magnetic sampling | SEL = Low | 27 | 50 | 75 | ms | |
SEL = High | 0.21 | 0.4 | 0.6 | ||||
ICC(AVG) | Average current consumption | VCC = 1.8 V | SEL = Low | 1.3 | µA | ||
SEL = High | 142 | ||||||
VCC = 3 V | SEL = Low | 1.6 | 3.3 | ||||
SEL = High | 153 | 370 | |||||
VCC = 5 V | SEL = Low | 2 | |||||
SEL = High | 160 | ||||||
ICC(PK) | Peak current consumption | 2 | 2.7 | mA | |||
tON | Power-on time (see Figure 11) | 55 | 100 | µs | |||
tACTIVE | Active time period (see Figure 11) | 40 | µs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
BOP | Magnetic threshold operate point (see Figure 9) | 0.6 | 2 | 3.3 | mT | |
BRP | Magnetic threshold release point (see Figure 9) | –3.3 | –2 | –0.6 | mT | |
BHYS | Magnetic hysteresis: |BOP – BRP| | 2 | 4 | mT |