The DRV5033-Q1 device is a chopper-stabilized Hall Effect Sensor that offers a magnetic sensing solution with superior sensitivity stability over temperature and integrated protection features.
The DRV5033-Q1 responds the same to both polarities of magnetic field direction. When the applied magnetic flux density exceeds the BOP threshold, the DRV5033-Q1 open-drain output goes low. The output stays low until the field decreases to less than BRP, and then the output goes to high impedance. The output current sink capability is 30 mA. A wide operating voltage range from 2.7 to 38 V with reverse polarity protection up to –22 V makes the device suitable for a wide range of automotive applications.
Internal protection functions are provided for reverse supply conditions, load dump, and output short circuit or over current.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
DRV5033-Q1 | SOT-23 (3) | 2.92 mm × 1.30 mm |
TO-92 (3) | 4.00 mm × 3.15 mm |
Changes from D Revision (May 2016) to E Revision
Changes from C Revision (February 2016) to D Revision
Changes from B Revision (December 2015) to C Revision
Changes from A Revision (May 2015) to B Revision
Changes from * Revision (December 2014) to A Revision
For additional configuration information, see Device Markings and Mechanical, Packaging, and Orderable Information.
PIN | TYPE | DESCRIPTION | ||
---|---|---|---|---|
NAME | DBZ | LPG | ||
GND | 3 | 2 | GND | Ground pin |
OUT | 2 | 3 | Output | Hall sensor open-drain output. The open drain requires a resistor pullup. |
VCC | 1 | 1 | PWR | 2.7 to 38 V power supply. Bypass this pin to the GND pin with a 0.01-µF (minimum) ceramic capacitor rated for VCC. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Power supply voltage | VCC | –22(2) | 40 | V |
Voltage ramp rate (VCC), VCC < 5 V | Unlimited | V/µs | ||
Voltage ramp rate (VCC), VCC > 5 V | 0 | 2 | ||
Output pin voltage | –0.5 | 40 | V | |
Output pin reverse current during reverse supply condition | 0 | 100 | mA | |
Magnetic flux density, BMAX | Unlimited | |||
Operating junction temperature, TJ | Q, see Figure 24 | –40 | 150 | °C |
E, see Figure 24 | –40 | 17 | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2500 | V | |
Charged-device model (CDM), per AEC Q100-011 | ±500 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Power supply voltage | 2.7 | 38 | V | |
VO | Output pin voltage (OUT) | 0 | 38 | V | |
ISINK | Output pin current sink (OUT)(1) | 0 | 30 | mA | |
TA | Operating ambient temperature | Q, see Figure 24 | –40 | 125 | °C |
E, see Figure 24 | –40 | 150 |
THERMAL METRIC(1) | DRV5033-Q1 | UNIT | ||
---|---|---|---|---|
DBZ (SOT-23) | LPG (TO-92) | |||
3 PINS | 3 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 333.2 | 180 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 99.9 | 98.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 66.9 | 154.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 4.9 | 40 | °C/W |
ψJB | Junction-to-board characterization parameter | 65.2 | 154.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VCC) | ||||||
VCC | VCC operating voltage | 2.7 | 38 | V | ||
ICC | Operating supply current | VCC = 2.7 to 38 V, TA = 25°C | 2.7 | mA | ||
VCC = 2.7 to 38 V, TA = TA, MAX(1) | 3 | 3.6 | ||||
ton | Power-on time | AJ version | 35 | 50 | µs | |
FA version | 35 | 70 | ||||
OPEN DRAIN OUTPUT (OUT) | ||||||
rDS(on) | FET on-resistance | VCC = 3.3 V, IO = 10 mA, TA = 25°C | 22 | Ω | ||
VCC = 3.3 V, IO = 10 mA, TA = 125°C | 36 | 50 | ||||
Ilkg(off) | Off-state leakage current | Output Hi-Z | 1 | µA | ||
PROTECTION CIRCUITS | ||||||
VCCR | Reverse supply voltage | –22 | V | |||
IOCP | Overcurrent protection level | OUT shorted VCC | 15 | 30 | 45 | mA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
OPEN DRAIN OUTPUT (OUT) | ||||||
td | Output delay time | B = BRP – 10 mT to BOP + 10 mT in 1 µs | 13 | 25 | µs | |
tr | Output rise time (10% to 90%) | R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V | 200 | ns | ||
tf | Output fall time (90% to 10%) | R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V | 31 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT(1) | |
---|---|---|---|---|---|---|
ƒBW | Bandwidth(2) | 20 | 30 | kHz | ||
DRV5033FA: ±3.5 / ±2 mT | ||||||
BOP | Operate point; see Figure 12 | ±1.8 | ±3.5 | ±6.8 | mT | |
BRP | Release point; see Figure 12 | ±0.5 | ±2 | ±4.2 | mT | |
Bhys | Hysteresis; Bhys = (BOP – BRP)(3) | ±1.5 | mT | |||
BO | Magnetic offset; BO = (BOP + BRP) / 2 | ±2.8 | mT | |||
DRV5033AJ: ±6.9 / ±3.5 mT | ||||||
BOP | Operate point; see Figure 12 | ±3 | ±6.9 | ±12 | mT | |
BRP | Release point; see Figure 12 | ±1 | ±3.5 | ±5 | mT | |
Bhys | Hysteresis; Bhys = (BOP – BRP)(3) | 3.4 | mT | |||
BO | Magnetic offset; BO = (BOP + BRP) / 2 | 5.2 | mT |
TA = 25°C | ||
TA = 25°C |
TA = 25°C |
TA = 25°C |
VCC = 3.3 V | ||
VCC = 3.3 V |
VCC = 3.3 V |
VCC = 3.3 V |