SLVSGJ9 May   2024 DRV7308

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Absolute Maximum Ratings
  7. 6 ESD Ratings
  8. 7 Recommended Operating Conditions
  9. 8 Thermal Information
  10. 9 Electrical Characteristics
  11. 10Timing Diagrams
  12. 11Typical Characteristics
  13. 12Detailed Description
    1. 12.1 Overview
    2. 12.2 Functional Block Diagram
    3. 12.3 Feature Description
      1. 12.3.1 Output Stage
      2. 12.3.2 Input Control Logic
      3. 12.3.3 ENABLE (EN) Pin Function
      4. 12.3.4 Temperature Sensor Output (VTEMP)
      5. 12.3.5 Brake Function
      6. 12.3.6 Slew Rate Control (SR)
      7. 12.3.7 Dead Time
      8. 12.3.8 Current Limit Functionaity (ILIMIT)
      9. 12.3.9 Pin Diagrams
        1. 12.3.9.1 Four-Level Input Pin
        2. 12.3.9.2 Open-Drain Pin
        3. 12.3.9.3 Logic-Level Input Pin (Internal Pulldown)
    4. 12.4 Protections
      1. 12.4.1 GVDD Undervoltage Lockout
      2. 12.4.2 Bootstrap Undervoltage Lockout
      3. 12.4.3 Current Limit Protection
      4. 12.4.4 GaNFET Overcurrent Protection
      5. 12.4.5 Thermal Shutdown (OTS)
  14. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  15. 14Revision History
  16. 15Mechanical, Packaging, and Orderable Information
    1. 15.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
  • REN|68
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.1 Overview

The DRV7308 is a three-phase IPM, with three integrated half-H-bridge 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The device applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device integrates pre-drivers for all GaNFETs with slew rate control of phase node voltages. The low RDS_ON, slew rate control, zero reverse recovery, and low output capacitance help achieve more than 99% efficiency for a 3-phase modulated, FOC driven, 250W motor drive application, eliminating the need for heat sink.

The device integrates a suite of protections including overcurrent limit, overtemperature protection, overcurrent protection for all the GaN FETs, undervoltage protection for the GVDD and bootstrap power supplies, and adaptive dead time insertion to avoid shoot through conditions.

The device integrates a bootstrap rectifier with integrated GaN FET and a transient current limit, which eliminates the need for an external boot diode. The DRV7308 brings out all three low-side source pins of the GaN FETs to support 3-,2-, or 1-shunt current sensing. The device integrates an 11MHz, 15V/μs operational amplifier for single shunt current sensing in FOC and trapezoidal control of BLDC motors.

The low dead time helps achieve ultra quiet operations in BLDC/PMSM motors. The low propagation delay helps achieve lower distortion and accurate average current sensing.

The DRV7308 is available in a VQFN 12mm x 12mm package.