SLVSGJ9 May 2024 DRV7308
ADVANCE INFORMATION
The DRV7308 integrates GaN FET overcurrent protection (GaN_OCP), overtemperature shutdown (OTSD), GVDD and bootstrap supply undervoltage protection (GVDD_UVLO and VBOOT_UVLO), and current limit (ILIMIT). Table 12-3 summarizes various faults details.
FAULT | CONDITION | REPORT | GAN BRIDGE | RECOVERY |
---|---|---|---|---|
GaN overcurrent protection (GaN_OCP) | GaN FET current > IOCP | HV_nFAULT | All GaN pre-drivers turn off resulting Hi-Z (all three phases) | Latched. 20μs to 40μs toggling pulse on EN pin or GVDD power recycling |
SLx overcurrent limit (OCL) | V SLx> VILIMIT | HV_nFAULT | All GaN pre-drivers turn off resulting Hi-Z (all three phases) | Retry. After a fault clear time > tF_CLR |
GVDD undervoltage | VGVDD < VGVDD_UV | HV_nFAULT | All GaN pre-drivers turn off resulting Hi-Z (all three phases) | Automatic: VGVDD_UVLO > VGVDD_UVLO_ON |
Boot supply undervoltage (voltage between BOOTx and OUTx pin) | VBOOTx < VBST_UV | - | The impacted high-side GaN pre-drivers turn off. All other GaNFETs continue to operate. | Automatic: VBOOTx > VBST_UV_ON |
Thermal shutdown (OTSD) | TJ > TSD, for any GaNFET | HV_nFAULT | All GaN pre-drivers turns off resulting Hi-Z (all three phases) | Latched. 20μs to 40μs toggling pulse on EN pin or GVDD power recycling |