SLVSH22 May   2024 DRV8000-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUT7 HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Over Current Protection
          3. 7.4.2.2.3 High-side Driver Open Load Detection
      3. 7.4.3 Electro-chromic Glass Driver
        1. 7.4.3.1 Electro-chromic Driver Control
        2. 7.4.3.2 Electro-chromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 Half-bridge ITRIP Regulation
        3. 7.4.4.3 Half-bridge Protection and Diagnostics
          1. 7.4.4.3.1 Half-bridge Off-State Diagnostics (OLP)
          2. 7.4.4.3.2 Half-Bridge Active Open Load Detection (OLA)
          3. 7.4.4.3.3 Half-Bridge Over-Current Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 7.4.5.2.6.1 PDR Pre-Charge/Pre-Discharge Setup
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short Circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 SPI Interface
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. 8  DRV8000-Q1 Register Map
  10. 9 DRV8000-Q1_STATUS Registers
  11. 10DRV8000-Q1_CNFG Registers
  12. 11DRV8000-Q1_CTRL Registers
  13. 12Application and Implementation
    1. 12.1 Application Information
    2. 12.2 Typical Application
      1. 12.2.1 Design Requirements
    3. 12.3 Initialization Setup
    4. 12.4 Power Supply Recommendations
      1. 12.4.1 Bulk Capacitance Sizing
    5. 12.5 Layout
      1. 12.5.1 Layout Guidelines
      2. 12.5.2 Layout Example
  14. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  15. 14Revision History
  16. 15Mechanical, Packaging, and Orderable Information
    1. 15.1 Package Option Addendum
    2. 15.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
7.4.5.2.4 Gate Driver State Machine (TDRIVE)

The TDRIVE component of the smart gate drive architecture is an integrated gate drive state machine that provides automatic dead time insertion, parasitic dV/dt gate coupling prevention, and MOSFET gate fault detection.

The first component of the TDRIVE state machine is an automatic dead time handshake. Dead time is the period of body diode conduction time between the switching of the external high-side and low-side MOSFET to prevent any cross conduction or shoot through. The gate drivers of DRV8000-Q1 use VGS monitors to implement a break and then make dead time scheme by measuring the external MOSFET VGS voltage to determine when to properly enable the external MOSFETs. This scheme allows the gate driver to adjust the dead time for variations in the system such as temperature drift, aging, voltage fluctuations, and variation in the external MOSFET parameters. An additional fixed digital dead time (tDEAD_D) can be inserted if desired and is adjustable through the SPI registers.

The second component focuses on preventing parasitic dV/dt gate charge coupling. This is implemented by enabling a strong gate current pull-down (ISTRONG) whenever the opposite MOSFET in the half-bridge is switching. This feature helps remove parasitic charge that couples into the external MOSFET gate when the half-bridge switch node is rapidly slewing.

The third component implements a gate fault detection scheme to detect an issue with the gate voltage. This is used to detect pin-to-pin solder defects, a MOSFET gate failure, or a gate stuck high or stuck low voltage condition. This is done by using the VGS monitors to measure the gate voltage after the end of the tDRIVE time. If the gate voltage has not reached the proper threshold, the gate driver will report the corresponding fault condition. To ensure a false fault is not detected, a tDRIVE time should be selected that is longer than the time required to charge or discharge the MOSFET gate. The tDRIVE time does not impact the PWM minimum duration and will terminate early if another PWM command is received.

DRV8000-Q1 TDRIVE Turn On / Off Figure 7-25 TDRIVE Turn On / Off