SLVSH22 May   2024 DRV8000-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings Auto
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information RGZ package
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 External Components
    4. 7.4 Feature Description
      1. 7.4.1 Heater MOSFET Driver
        1. 7.4.1.1 Heater MOSFET Driver Control
        2. 7.4.1.2 Heater MOSFET Driver Protection
          1. 7.4.1.2.1 Heater SH_HS Internal Diode
          2. 7.4.1.2.2 Heater MOSFET VDS Overcurrent Protection (HEAT_VDS)
          3. 7.4.1.2.3 Heater MOSFET Open Load Detection
      2. 7.4.2 High-side Drivers
        1. 7.4.2.1 High-side Driver Control
          1. 7.4.2.1.1 High-side Driver PWM Generator
          2. 7.4.2.1.2 Constant Current Mode
          3. 7.4.2.1.3 OUT7 HS ITRIP Behavior
          4. 7.4.2.1.4 High-side Drivers - Parallel Outputs
        2. 7.4.2.2 High-side Driver Protection Circuits
          1. 7.4.2.2.1 High-side Drivers Internal Diode
          2. 7.4.2.2.2 High-side Driver Over Current Protection
          3. 7.4.2.2.3 High-side Driver Open Load Detection
      3. 7.4.3 Electro-chromic Glass Driver
        1. 7.4.3.1 Electro-chromic Driver Control
        2. 7.4.3.2 Electro-chromic Driver Protection
      4. 7.4.4 Half-bridge Drivers
        1. 7.4.4.1 Half-bridge Control
        2. 7.4.4.2 Half-bridge ITRIP Regulation
        3. 7.4.4.3 Half-bridge Protection and Diagnostics
          1. 7.4.4.3.1 Half-bridge Off-State Diagnostics (OLP)
          2. 7.4.4.3.2 Half-Bridge Active Open Load Detection (OLA)
          3. 7.4.4.3.3 Half-Bridge Over-Current Protection
      5. 7.4.5 Gate Drivers
        1. 7.4.5.1 Input PWM Modes
          1. 7.4.5.1.1 Half-Bridge Control
          2. 7.4.5.1.2 H-Bridge Control
          3. 7.4.5.1.3 DRVOFF - Gate Driver Shutoff Pin
        2. 7.4.5.2 Smart Gate Driver - Functional Block Diagram
          1. 7.4.5.2.1  Smart Gate Driver
          2. 7.4.5.2.2  Functional Block Diagram
          3. 7.4.5.2.3  Slew Rate Control (IDRIVE)
          4. 7.4.5.2.4  Gate Driver State Machine (TDRIVE)
            1. 7.4.5.2.4.1 tDRIVE Calculation Example
          5. 7.4.5.2.5  Propagation Delay Reduction (PDR)
          6. 7.4.5.2.6  PDR Pre-Charge/Pre-Discharge Control Loop Operation Details
            1. 7.4.5.2.6.1 PDR Pre-Charge/Pre-Discharge Setup
          7. 7.4.5.2.7  PDR Post-Charge/Post-Discharge Control Loop Operation Details
            1. 7.4.5.2.7.1 PDR Post-Charge/Post-Discharge Setup
          8. 7.4.5.2.8  Detecting Drive and Freewheel MOSFET
          9. 7.4.5.2.9  Automatic Duty Cycle Compensation (DCC)
          10. 7.4.5.2.10 Closed Loop Slew Time Control (STC)
            1. 7.4.5.2.10.1 STC Control Loop Setup
        3. 7.4.5.3 Tripler (Double-Stage) Charge Pump
        4. 7.4.5.4 Wide Common Mode Differential Current Shunt Amplifier
        5. 7.4.5.5 Gate Driver Protection Circuits
          1. 7.4.5.5.1 MOSFET VDS Overcurrent Protection (VDS_OCP)
          2. 7.4.5.5.2 Gate Driver Fault (VGS_GDF)
          3. 7.4.5.5.3 Offline Short Circuit and Open Load Detection (OOL and OSC)
      6. 7.4.6 Sense Output (IPROPI)
      7. 7.4.7 Protection Circuits
        1. 7.4.7.1 Fault Reset (CLR_FLT)
        2. 7.4.7.2 DVDD Logic Supply Power on Reset (DVDD_POR)
        3. 7.4.7.3 PVDD Supply Undervoltage Monitor (PVDD_UV)
        4. 7.4.7.4 PVDD Supply Overvoltage Monitor (PVDD_OV)
        5. 7.4.7.5 VCP Charge Pump Undervoltage Lockout (VCP_UV)
        6. 7.4.7.6 Thermal Clusters
        7. 7.4.7.7 Watchdog Timer
        8. 7.4.7.8 Fault Detection and Response Summary Table
    5. 7.5 Programming
      1. 7.5.1 SPI Interface
      2. 7.5.2 SPI Format
      3. 7.5.3 Timing Diagrams
  9. 8  DRV8000-Q1 Register Map
  10. 9 DRV8000-Q1_STATUS Registers
  11. 10DRV8000-Q1_CNFG Registers
  12. 11DRV8000-Q1_CTRL Registers
  13. 12Application and Implementation
    1. 12.1 Application Information
    2. 12.2 Typical Application
      1. 12.2.1 Design Requirements
    3. 12.3 Initialization Setup
    4. 12.4 Power Supply Recommendations
      1. 12.4.1 Bulk Capacitance Sizing
    5. 12.5 Layout
      1. 12.5.1 Layout Guidelines
      2. 12.5.2 Layout Example
  14. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  15. 14Revision History
  16. 15Mechanical, Packaging, and Orderable Information
    1. 15.1 Package Option Addendum
    2. 15.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
7.4.5.2.3 Slew Rate Control (IDRIVE)

The IDRIVE component of the smart gate drive architecture implements adjustable gate drive current control to adjust the external MOSFET VDS slew rate. This is achieved by implementing adjustable pull up (IDRVP) and pull down (IDRVN) current sources for the internal gate driver architecture.

The external MOSFET VDS slew rates are a critical factor for optimizing radiated and conducted emissions, diode reverse recovery, dV/dt parasitic gate coupling, and overvoltage or undervoltage transients on the switch-node of the half-bridge. IDRIVE operates on the principle that the VDS slew rates are predominantly determined by the rate of the gate charge (or gate current) delivered during the MOSFET QGD or Miller charging region. By allowing the gate driver to adjust the gate current, it can effectively control the slew rate of the external power MOSFETs.

IDRIVE allows the DRV8000-Q1 to dynamically change the gate driver current setting through the IDRVP_x and IDRVN_x bits. The device provides 16 settings between the 0.5-mA and 62-mA range for the source and sink currents as shown in Table 7-44. The peak gate drive current is available for the tDRIVE duration. After the MOSFET is switched and the tDRIVE duration expires, the gate driver switches to a hold current (IHOLD) for the pull up source current to limit the output current in case of a short circuit condition and to improve the efficiency of the driver.

The IDRV_LOx bits allows for 16 settings <0.5mA if extremely low slew rate control is required.

Table 7-44 IDRIVE Source (IDRVP) and Sink (IDRVN) Current
IDRVP_x / IDRVN_xGate Source / Sink Current
IDRV_LOx = 0bIDRV_LOx = 1b
0000b0.5 mA50 µA
0001b1 mA110 µA
0010b2 mA170 µA
0011b3 mA230 µA
0100b4 mA290 µA
0101b5 mA350 µA
0110b6 mA410 µA
0111b7 mA600 µA
1000b8 mA725 µA
1001b12 mA850 µA
1010b16 mA1 mA
1011b20 mA1.2 mA
1100b24 mA1.4 mA
1101b31 mA1.6 mA
1110b48 mA1.8 mA
1111b62 mA2.3 mA