SLLSFA9B July   2020  – June 2021 DRV8106-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Descriptions
  4. 4 Revision History
  5. 5 Pin Configuration
    1.     DRV8106-Q1_RHB Package (VQFN) Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 External Components
      2. 7.3.2 Device Interface Variants
        1. 7.3.2.1 Serial Peripheral Interface (SPI)
        2. 7.3.2.2 Hardware (H/W)
      3. 7.3.3 Input PWM Modes
        1. 7.3.3.1 Half-Bridge Control
      4. 7.3.4 Smart Gate Driver
        1. 7.3.4.1 Functional Block Diagram
        2. 7.3.4.2 Slew Rate Control (IDRIVE)
        3. 7.3.4.3 Gate Drive State Machine (TDRIVE)
      5. 7.3.5 Doubler (Single-Stage) Charge Pump
      6. 7.3.6 Wide Common Mode Differential Current Shunt Amplifier
      7. 7.3.7 Pin Diagrams
        1. 7.3.7.1 Logic Level Input Pin (DRVOFF, IN1/EN, nHIZx, nSLEEP, nSCS, SCLK, SDI)
        2. 7.3.7.2 Logic Level Push Pull Output (SDO)
        3. 7.3.7.3 Logic Level Open Drain Output (nFAULT)
        4. 7.3.7.4 Quad-Level Input (GAIN)
        5. 7.3.7.5 Six-Level Input (IDRIVE, VDS)
      8. 7.3.8 Protection and Diagnostics
        1. 7.3.8.1  Gate Driver Disable and Enable (DRVOFF and EN_DRV)
        2. 7.3.8.2  Fault Reset (CLR_FLT)
        3. 7.3.8.3  DVDD Logic Supply Power on Reset (DVDD_POR)
        4. 7.3.8.4  PVDD Supply Undervoltage Monitor (PVDD_UV)
        5. 7.3.8.5  PVDD Supply Overvoltage Monitor (PVDD_OV)
        6. 7.3.8.6  VCP Charge Pump Undervoltage Lockout (VCP_UV)
        7. 7.3.8.7  MOSFET VDS Overcurrent Protection (VDS_OCP)
        8. 7.3.8.8  Gate Driver Fault (VGS_GDF)
        9. 7.3.8.9  Thermal Warning (OTW)
        10. 7.3.8.10 Thermal Shutdown (OTSD)
        11. 7.3.8.11 Offline Short Circuit and Open Load Detection (OOL and OSC)
        12. 7.3.8.12 Fault Detection and Response Summary Table
    4. 7.4 Device Function Modes
      1. 7.4.1 Inactive or Sleep State
      2. 7.4.2 Standby State
      3. 7.4.3 Operating State
    5. 7.5 Programming
      1. 7.5.1 SPI Interface
      2. 7.5.2 SPI Format
      3. 7.5.3 SPI Interface for Multiple Slaves
        1. 7.5.3.1 SPI Interface for Multiple Slaves in Daisy Chain
    6. 7.6 Register Maps
      1. 7.6.1 STATUS Registers
      2. 7.6.2 CONTROL Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Driver Configuration
          1. 8.2.2.1.1 VCP Load Calculation Example
          2. 8.2.2.1.2 IDRIVE Calculation Example
        2. 8.2.2.2 Current Shunt Amplifier Configuration
        3. 8.2.2.3 Power Dissipation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
      2. 11.1.2 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RHB|32
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Descriptions

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.

The DRV8106-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

Device Information (1)
PART NUMBER PACKAGE BODY SIZE (NOM)
DRV8106-Q1 VQFN (32) 5.00 mm x 5.00 mm
(1) For all avaiable packages, see orderable addendum at the end of the data sheet.
GUID-18BD0680-FB39-4759-9297-386EB79023D2-low.gif Simplified Schematic