SLVSG63A January 2023 – March 2024 DRV8143-Q1
PRODUCTION DATA
Measured at VVM = 13.5 V
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RHS_ON | High-side FET on resistance, HVSSOP package | IOUT = 6 A, TJ = 25°C | 24.5 | mΩ | ||
IOUT = 6 A, TJ = 150°C | 46.6 | mΩ | ||||
High-side FET on resistance, VQFN-HR package | IOUT = 6 A, TJ = 25°C | 21 | mΩ | |||
IOUT = 6 A, TJ = 150°C | 39.9 | mΩ | ||||
RLS_ON | Low-side FET on resistance, HVSSOP package | IOUT = 6 A, TJ = 25°C | 24.5 | mΩ | ||
IOUT = 6 A, TJ = 150°C | 46.6 | mΩ | ||||
Low-side FET on resistance, VQFN-HR package | IOUT = 6 A, TJ = 25°C | 21 | mΩ | |||
IOUT = 6 A, TJ = 150°C | 39.9 | mΩ | ||||
VSD | Low-side & High-side FET source-drain voltage when body diode is forward biased | IOUT = +/- 6 A(both directions) | 0.4 | 0.9 | 1.5 | V |
RHi-Z | OUT resistance to GND in SLEEP or STANDBY state | VOUTx = VVM = 13.5 V | 1.4 | 64 | KΩ |