SLVSG25A January   2023  – March 2024 DRV8144-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1. 5.1 HW Variant
      1. 5.1.1 VQFN-HR (16) package
    2. 5.2 SPI Variant
      1. 5.2.1 VQFN-HR (16) package
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
      1. 6.5.1  Power Supply & Initialization
      2. 6.5.2  Logic I/Os
      3. 6.5.3  SPI I/Os
      4. 6.5.4  Configuration Pins - HW Variant Only
      5. 6.5.5  Power FET Parameters
      6. 6.5.6  Switching Parameters with High-Side Recirculation
      7. 6.5.7  Switching Parameters with Low-Side Recirculation
      8. 6.5.8  IPROPI & ITRIP Regulation
      9. 6.5.9  Over Current Protection (OCP)
      10. 6.5.10 Over Temperature Protection (TSD)
      11. 6.5.11 Voltage Monitoring
      12. 6.5.12 Load Monitoring
      13. 6.5.13 Fault Retry Setting
      14. 6.5.14 Transient Thermal Impedance & Current Capability
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Waveforms
      1. 6.7.1 Output switching transients
        1. 6.7.1.1 High-Side Recirculation
        2. 6.7.1.2 Low-Side Recirculation
      2. 6.7.2 Wake-up Transients
        1. 6.7.2.1 HW Variant
        2. 6.7.2.2 SPI Variant
      3. 6.7.3 Fault Reaction Transients
        1. 6.7.3.1 Retry setting
        2. 6.7.3.2 Latch setting
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 HW Variant
      2. 7.2.2 SPI Variant
    3. 7.3 Feature Description
      1. 7.3.1 External Components
        1. 7.3.1.1 HW Variant
        2. 7.3.1.2 SPI Variant
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 Register - Pin Control - SPI Variant Only
      3. 7.3.3 Device Configuration
        1. 7.3.3.1 Slew Rate (SR)
        2. 7.3.3.2 IPROPI
        3. 7.3.3.3 ITRIP Regulation
        4. 7.3.3.4 DIAG
          1. 7.3.3.4.1 HW variant
          2. 7.3.3.4.2 SPI variant
      4. 7.3.4 Protection and Diagnostics
        1. 7.3.4.1 Over Current Protection (OCP)
        2. 7.3.4.2 Over Temperature Protection (TSD)
        3. 7.3.4.3 Off-State Diagnostics (OLP)
        4. 7.3.4.4 On-State Diagnostics (OLA) - SPI Variant Only
        5. 7.3.4.5 VM Over Voltage Monitor
        6. 7.3.4.6 VM Under Voltage Monitor
        7. 7.3.4.7 Charge pump under voltage monitor
        8. 7.3.4.8 Power On Reset (POR)
        9. 7.3.4.9 Event Priority
    4. 7.4 Programming - SPI Variant Only
      1. 7.4.1 SPI Interface
      2. 7.4.2 Standard Frame
      3. 7.4.3 SPI Interface for Multiple Peripherals
        1. 7.4.3.1 Daisy Chain Frame for Multiple Peripherals
  9. 8 Register Map - SPI Variant Only
    1. 8.1 User Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Load Summary
    2. 9.2 Typical Application
      1. 9.2.1 HW Variant
      2. 9.2.2 SPI Variant
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Bulk Capacitance Sizing
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5.11 Voltage Monitoring

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VVMOV VM over voltage threshold while rising VMOV_SEL = 2'b00 (SPI), Only choice in HW variant 33.6 37 V
VMOV_SEL = 2'b01 (SPI only) 28 31 V
VMOV_SEL = 2'b10 (SPI only) 18 21 V
VVMOV_HYS VM over voltage hysteresis 0.6 V
tVMOV VM over voltage deglitch time 10 12 19 µs
VVMUV VM under voltage threshold while falling 4.2 4.5 V
VVMUV_HYS VM under voltage hysteresis 200 mV
tVMUV VM under voltage deglitch time 8 12 19 µs
VMPOR_FALL VM voltage at which device goes into POR 3.6 V
VMPOR_RISE VM voltage at which device comes out of POR 3.9 V
VCPUV Charge pump under-voltage threshold while falling VVM+2.5 V
tCPUV Charge pump deglitch time 10 12 19 µs