SLVSH03 December 2023 DRV8234
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM) | ||||||
IVMQ | VM sleep mode current | nSLEEP = 0 V, VVM = 24 V, TJ = 27°C | 0.1 | 1 | µA | |
IVM | VM active mode current | nSLEEP = 3.3 V, IN1 = 3.3 V, IN2 = 0 V, VVM = 24 V | 3.5 | 4 | mA | |
tWAKE | Turnon time | nSLEEP = 1 to I2C ready | 410 | μs | ||
LOGIC-LEVEL INPUTS (IN1, IN2, SDA, SCL, nSLEEP) | ||||||
VIL | Input logic low voltage | 0 | 0.5 | V | ||
VIH | Input logic high voltage | 1.5 | 5.5 | V | ||
VHYS | Input hysteresis | 160 | mV | |||
VHYS | Input hysterisis | nSLEEP pin | 60 | |||
IIL | Input logic low current | VI = 0 V | -1 | 1 | µA | |
IIH | Input logic high current | VI = 5 V | 33 | 100 | µA | |
RPD | Input pulldown resistance, INx | To GND | 100 | kΩ | ||
tDEGLITCH | Input logic deglitch, INx | 50 | ns | |||
TRI-LEVEL INPUTS (A1, A0) | ||||||
VTIL | Tri-level input logic low voltage | 0 | 0.6 | V | ||
VTIHZ | Tri-level input Hi-Z voltage | 1.8 | 2 | 2.2 | V | |
VTIH | Tri-level input logic high voltage | 2.7 | 5.5 | V | ||
RTPD | Tri-level pulldown resistance | to GND | 200 | kΩ | ||
ITPU | Tri-level pullup current | to 3.3 V | 10 | µA | ||
OPEN-DRAIN OUTPUTS (nFAULT, RC_OUT, SDA) | ||||||
VOL | Output logic low voltage | IOD = 5 mA | 0.3 | V | ||
IOZ | Output logic high current | VOD = 3.3 V | -1 | 1 | µA | |
tPW_RC | RC_OUT pulse width | 30 | 50 | 70 | µs | |
tPW_nFAULT | nFAULT low pulse width | RC Count overflow, RC_REP = 11b | 30 | 50 | 70 | µs |
CB | SDA capacitive load for each bus line | 400 | pF | |||
DRIVER OUTPUTS (OUTx) | ||||||
RDS(ON)_HS | High-side MOSFET on resistance | IOUTx = 1 A; TJ = 25 °C | 300 | 360 | mΩ | |
RDS(ON)_HS | High-side MOSFET on resistance | IOUTx = 1 A; TJ = 125 °C | 450 | 540 | mΩ | |
RDS(ON)_HS | High-side MOSFET on resistance | IOUTx = 1 A; TJ = 150 °C | 500 | 600 | mΩ | |
RDS(ON)_LS | Low-side MOSFET on resistance | IOUTx = -1 A; TJ = 25 °C | 300 | 360 | mΩ | |
RDS(ON)_LS | Low-side MOSFET on resistance | IOUTx = -1 A; TJ = 125 °C | 450 | 540 | mΩ | |
RDS(ON)_LS | Low-side MOSFET on resistance | IOUTx = -1 A; TJ = 150 °C | 500 | 600 | mΩ | |
VSD | Body diode forward voltage | IOUTx = -1 A | 0.8 | V | ||
tRISE | Output rise time | VOUTx rising from 10% to 90% of VVM | 200 | ns | ||
tFALL | Output fall time | VOUTx falling from 90% to 10% of VVM | 140 | ns | ||
tPD | Input to output propagation delay | Input to OUTx | 650 | ns | ||
tDEAD | Output dead time | 200 | ns | |||
CURRENT SENSE AND REGULATION (IPROPI, VREF) | ||||||
VREF_INT | Internal reference voltage | INT_VREF = 1b | 2.88 | 3 | 3.12 | V |
AIPROPI | Current scaling factor | 1500 | µA/A | |||
AERR | Current mirror total error | IOUT = 0.1 A, VVM ≥ 5.5 V | -10 | 10 | % | |
AERR | Current mirror total error | 0.15 A ≤ IOUT < 0.5 A, VVM ≥ 5.5 V | -7 | 7 | % | |
AERR | Current mirror total error | IOUT ≥ 0.5 A, VVM ≥ 5.5 V | -5 | 5 | % | |
tOFF | Current regulation off time | 20 | µs | |||
tBLANK | Current sense blanking time | TBLANK = 0b | 1.8 | µs | ||
tBLANK | Current sense blanking time | TBLANK = 1b | 1 | µs | ||
tDEG | Current regulation and stall detection deglitch time | TDEG = 0b | 2 | µs | ||
tDEG | Current regulation and stall detection deglitch time | TDEG = 1b | 1 | µs | ||
tINRUSH | Inrush time blanking for stall detection | 5 | 6716 | ms | ||
Voltage regulation | ||||||
ΔVLINE | Line regulation | 5.5 V ≤ VVM ≤ 38 V, VOUT = 5 V, IOUT = 2 A | ±2% | |||
ΔVLOAD | Load regulation | VVM = 24 V, VOUT = 5 V, IOUT = 100 mA to 2 A | ±1% | |||
PROTECTION CIRCUITS | ||||||
VUVLO_VM | VM supply undervoltage lockout (UVLO) | Supply rising | 4.15 | 4.3 | 4.45 | V |
Supply falling | 4.05 | 4.2 | 4.35 | V | ||
VUVLO_HYS | Supply UVLO hysteresis | Rising to falling threshold | 100 | mV | ||
tUVLO | Supply undervoltage deglitch time | VVM falling to OUTx disabled | 10 | µs | ||
VRST | VM UVLO reset | VM falling, device reset, no I2C communications | 3.9 | V | ||
VOVP_TH | Overvoltage protection threshold | VOUT - VVM | 200 | mV | ||
tOVP_ON | Overvoltage protection turn-on time | 10 | µs | |||
tOVP_OFF | Overvoltage protection turn-off time | 250 | µs | |||
IOCP | Overcurrent protection trip point | 3.7 | A | |||
tOCP | Overcurrent protection deglitch time | 2 | µs | |||
tRETRY | Retry time | 1.7 | ms | |||
TTSD | Thermal shutdown temperature | 150 | 175 | °C | ||
THYS | Thermal shutdown hysteresis | 40 | °C |