SLVSGY7A November 2023 – March 2024 DRV8242-Q1
PRODUCTION DATA
Each VM pin must be bypassed to ground using low-ESR ceramic bypass capacitors with recommended values of 0.1 μF rated for VM. These capacitors should be placed as close to the VM pins as possible with a thick trace or ground plane connection to the device GND pin.
Additional bulk capacitance is required to bypass the high current path. This bulk capacitance should be placed such that it minimizes the length of any high current paths. The connecting metal traces should be as wide as possible, with numerous vias connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.
For the SPI (P) device variant, VDD pin may be bypassed to ground using low-ESR ceramic 6.3 V bypass capacitor with recommended values of 0.1 μF.