SLVSG23C December 2021 – August 2022 DRV8243-Q1
PRODUCTION DATA
Measured at VVM = 13.5 V
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RHS_ON | High-side FET on resistance, HVSSOP package | IOUT = 3 A, TJ = 25°C | 49 | mΩ | ||
IOUT = 3 A, TJ = 150°C | 93.1 | mΩ | ||||
High-side FET on resistance, VQFN-HR package | IOUT = 3 A, TJ = 25°C | 41.7 | mΩ | |||
IOUT = 3 A, TJ = 150°C | 79.8 | mΩ | ||||
RLS_ON | Low-side FET on resistance, HVSSOP package | IOUT = 3 A, TJ = 25°C | 49 | mΩ | ||
IOUT = 3 A, TJ = 150°C | 93.1 | mΩ | ||||
Low-side FET on resistance, VQFN-HR package | IOUT = 3 A, TJ = 25°C | 42 | mΩ | |||
IOUT = 3 A, TJ = 150°C | 79.8 | mΩ | ||||
VSD | Low-side & High-side FET source-drain voltage when body diode is forward biased | IOUT = +/- 3 A (both directions) | 0.4 | 0.9 | 1.5 | V |
RHi-Z | OUT resistance to GND in SLEEP or STANDBY state, VOUTx = VVM = 13.5 V | SR = 3'b000 or 3'b001 or 3'b010 or 3'b111 or LVL2 or LVL5 | 2 | 5 | KΩ | |
SR = 3'b011 or LVL3 | 7 | 14 | KΩ | |||
SR = 3'b100 or LVL4 | 5 | 10.5 | KΩ | |||
SR = 3'b101 or LVL1 | 4 | 8.5 | KΩ | |||
SR = 3'b110 or LVL6 | 2.5 | 6 | KΩ |