SLVSHB2 February 2024 DRV8262-Q1
PRODUCTION DATA
In single H-bridge mode, on-resistance of each FET is typically 25 mΩ at 25 °C, and 43 mΩ at 150 °C.
Substituting the following values in the power loss equations -
VM = 24 V
IL = 8 A
RDS(ON) = 25 mΩ
D = 0.5
VD = 1 V
tD = 300 ns
tRF = 110 ns
fPWM = 20 kHz
The losses in each FET can be calculated as follows -
PHS1 = 25 mΩ × 82 = 1.6 W
PLS1 = 0
PHS2 = [25 mΩ × 82 x (1-0.5)] + [2 x 1 V x 8 A x 300 ns x 20 KHz] = 0.896 W
PLS2 = [ 25 mΩ × 82 x 0.5] + [24 x 8 A x 110 ns x 20 kHz] = 1.223 W
Quiescent Current Loss PQ = 24 V × 5 mA = 0.12 W
PTOT = PHS1 + PLS1 + PHS2 + PLS2 + PQ = 1.6 + 0 + 0.896 + 1.223 + 0.12 = 3.84 W