SLVSHB2 February 2024 DRV8262-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM, DVDD) | ||||||
IVM | VM operating supply current | nSLEEP = 1, No load, VCC = External 5V | 5 | 8 | mA | |
nSLEEP = 1, No motor load, VCC = DVDD | 8.5 | 13 | ||||
IVMQ | VM sleep mode supply current | nSLEEP = 0 | 3 | 8 | μA | |
tSLEEP | Sleep time | nSLEEP = 0 to sleep-mode | 120 | μs | ||
tRESET | nSLEEP reset pulse | nSLEEP low to clear fault | 20 | 40 | μs | |
tWAKE | Wake-up time | nSLEEP = 1 to output transition | 0.75 | 1 | ms | |
tON | Turn-on time | VM > UVLO to output transition | 0.8 | 1.3 | ms | |
VDVDD | Internal regulator voltage | No external load, 6 V < VVM < 60 V | 4.75 | 5 | 5.25 | V |
No external load, VVM = 4.5 V | 4.3 | 4.45 | V | |||
CHARGE PUMP (VCP, CPH, CPL) | ||||||
VVCP | VCP operating voltage | 6 V < VVM < 60 V | VVM + 5 | V | ||
f(VCP) | Charge pump switching frequency | VVM > UVLO; nSLEEP = 1 | 360 | kHz | ||
LOGIC-LEVEL INPUTS (IN1, IN2, IN3, IN4, OCPM, MODE1, MODE2, nSLEEP) | ||||||
VIL | Input logic-low voltage | 0 | 0.6 | V | ||
VIH | Input logic-high voltage | 1.5 | 5.5 | V | ||
VHYS | Input logic hysteresis | 100 | mV | |||
VHYS _nSLEEP | nSLEEP logic hysteresis | 300 | mV | |||
IIL | Input logic-low current (except MODE2) | VIN = 0 V | –1 | 1 | μA | |
IIH | Input logic-high current (except MODE2) | VIN = 5 V | 50 | μA | ||
RPU | MODE2 internal pull-up resistor | 220 | kΩ | |||
tPDH1 | INx high to OUTx high propagation delay | 600 | ns | |||
tPDL1 | INx low to OUTx low propagation delay | 600 | ns | |||
TRI-LEVEL INPUTS (DECAY) | ||||||
VI1 | Input logic-low voltage | Tied to GND | 0 | 0.6 | V | |
VI2 | Input Hi-Z voltage | Hi-Z (>500kΩ to GND) | 1.8 | 2 | 2.2 | V |
VI3 | Input logic-high voltage | Tied to DVDD | 2.7 | 5.5 | V | |
IO | Output pull-up current | 10.5 | μA | |||
QUAD-LEVEL INPUTS (TOFF) | ||||||
VI1 | Input logic-low voltage | Tied to GND | 0 | 0.6 | V | |
VI2 | 330kΩ ± 5% to GND | 1 | 1.25 | 1.4 | V | |
VI3 | Input Hi-Z voltage | Hi-Z (>500kΩ to GND) | 1.8 | 2 | 2.2 | V |
VI4 | Input logic-high voltage | Tied to DVDD | 2.7 | 5.5 | V | |
IO | Output pull-up current | 10.5 | μA | |||
CONTROL OUTPUTS (nFAULT) | ||||||
VOL | Output logic-low voltage | IO = 5 mA | 0.3 | V | ||
IOH | Output logic-high leakage | –1 | 1 | μA | ||
MOTOR DRIVER OUTPUTS (OUT1, OUT2, OUT3, OUT4) | ||||||
RDS(ONH_DUAL) | Dual H-bridge, High-side FET on resistance | TJ = 25 °C, IO = -5 A | 50 | 60 | mΩ | |
TJ = 125 °C, IO = -5 A | 75 | 94 | mΩ | |||
TJ = 150 °C, IO = -5 A | 85 | 107 | mΩ | |||
RDS(ONL_DUAL) | Dual H-bridge, Low-side FET on resistance | TJ = 25 °C, IO = 5 A | 50 | 60 | mΩ | |
TJ = 125 °C, IO = 5 A | 72 | 90 | mΩ | |||
TJ = 150 °C, IO = 5 A | 80 | 100 | mΩ | |||
RDS(ONH_SINGLE) | Single H-bridge, High-side FET on resistance | TJ = 25 °C, IO = -5 A | 25 | 30 | mΩ | |
TJ = 125 °C, IO = -5 A | 38 | 47 | mΩ | |||
TJ = 150 °C, IO = -5 A | 43 | 54 | mΩ | |||
RDS(ONL_SINGLE) | Single H-bridge, Low-side FET on resistance | TJ = 25 °C, IO = 5 A | 25 | 30 | mΩ | |
TJ = 125 °C, IO = 5 A | 36 | 45 | mΩ | |||
TJ = 150 °C, IO = 5 A | 40 | 50 | mΩ | |||
ILEAK | Output leakage current to GND | Sleep-mode, H-bridges are Hi-Z, VVM = 60 V | 300 | μA | ||
tRF | Output rise/fall time | IO = 5 A, between 10% and 90% | 110 | ns | ||
tD | Output dead time | VM = 24V, IO = 5 A | 300 | ns | ||
CURRENT SENSE AND REGULATION (IPROPI, VREF) | ||||||
AIPROPI | Current mirror gain | 212 | μA/A | |||
AERR | Current mirror scaling error | 10% to 20% rated current | -12 | 12 | % | |
20% to 40% rated current | -7 | 7 | ||||
40% to 100% rated current | -4 | 4 | ||||
IVREF | VREF Leakage Current | VREF = 3.3 V | 30 | nA | ||
tOFF | PWM off-time | TOFF = 0 | 7 | μs | ||
TOFF = 1 | 16 | |||||
TOFF = Hi-Z | 24 | |||||
TOFF = 330 kΩ to GND | 32 | |||||
tDEG | Current regulation deglitch time | 0.5 | μs | |||
tBLK | Current Regulation Blanking time | 1.5 | μs | |||
PROTECTION CIRCUITS | ||||||
VUVLO | VM UVLO lockout | VM falling | 4.1 | 4.25 | 4.35 | V |
VM rising | 4.2 | 4.35 | 4.45 | |||
VCCUVLO | VCC UVLO lockout | VCC falling | 2.7 | 2.8 | 2.9 | V |
VCC rising | 2.8 | 2.9 | 3.05 | |||
VUVLO,HYS | Undervoltage hysteresis | Rising to falling threshold | 100 | mV | ||
VCPUV | Charge pump undervoltage | VCP falling | VVM + 2 | V | ||
IOCP | Overcurrent protection | Dual H-bridge, Current through any FET | 8 | A | ||
Single H-bridge, Current through any FET | 16 | A | ||||
tOCP | Overcurrent detection delay | 2.1 | μs | |||
tRETRY | Overcurrent retry time | 4.1 | ms | |||
TOTSD | Thermal shutdown | Die temperature TJ | 150 | 165 | 180 | °C |
THYS_OTSD | Thermal shutdown hysteresis | Die temperature TJ | 20 | °C |
Guaranteed by design.