DRV8300U is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.
The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
DRV8300UDPW | TSSOP (20) | 6.40 mm × 4.40 mm |
DRV8300UDIPW | TSSOP (20) | 6.40 mm × 4.40 mm |
DRV8300UDRGE | VQFN (24) | 4.00 mm × 4.00 mm |
Changes from Revision * (July 2022) to Revision A (October 2022)
Device Variants | Package | Integrated Bootstrap Diode | GLx polarity with respect to INLx Input | Deadtime |
---|---|---|---|---|
DRV8300UD | 20-Pin TSSOP | Yes | Inverted | Fixed |
DRV8300UDI | Yes | Non-Inverted | Fixed | |
DRV8300UD | 24-Pin VQFN | Yes | Non-Inverted or Inverted | Variable |
Parameters | DRV8300 | DRV8300U |
---|---|---|
GVDDUV rising | 4.6-V (typ) | 8.3-V (typ) |
GVDDUV falling | 4.35-V (typ) | 8-V (typ) |
BSTUV rising | 4.2-V (typ) | 8-V (typ) |
BSTUV falling | 4-V (typ) | 7.6-V(typ) |