SLVSE39B November 2017 – July 2018 DRV8304
UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
The DRV8304 device integrates three, half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. A doubler charge pump provides the proper gate-bias voltage to the high-side MOSFET across a wide operating-voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs. The half-bridge gate drivers can be used in combination to drive a 3-phase motor or separately to drive other types of loads.
The DRV8304 device implements a smart gate-drive architecture which allows the user to dynamically adjust the gate drive current without requiring external gate current limiting resistors. Additionally, this architecture provides a variety of protection features for the external MOSFETs including automatic dead-time insertion, parasitic dV/dt gate turnon prevention, and gate-fault detection.