SLVSE39B November 2017 – July 2018 DRV8304
UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
A clamping structure limits the gate-drive output voltage to the VGS,CLAMP voltage to help protect the external high-side MOSFETs from gate overvoltage damage. The positive voltage clamp is realized using a series of diodes. The negative voltage clamp uses the body diodes of the internal pulldown gate driver as shown in Figure 22.