SLVSE39B November   2017  – July 2018 DRV8304

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 3-Phase Smart Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 7.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 7.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 7.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 7.3.1.2 Device Interface Modes
          1. 7.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 7.3.1.2.2 Hardware Interface
        3. 7.3.1.3 Gate Driver Voltage Supplies
        4. 7.3.1.4 Smart Gate-Drive Architecture
          1. 7.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 7.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 7.3.1.4.3 Gate Drive Clamp
          4. 7.3.1.4.4 Propagation Delay
          5. 7.3.1.4.5 MOSFET VDS Monitors
          6. 7.3.1.4.6 VDRAIN Sense Pin
      2. 7.3.2 DVDD Linear Voltage Regulator
      3. 7.3.3 Pin Diagrams
      4. 7.3.4 Low-Side Current-Shunt Amplifiers
        1. 7.3.4.1 Bidirectional Current Sense Operation
        2. 7.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 7.3.4.3 Offset Calibration
      5. 7.3.5 Gate-Driver Protection Circuits
        1. 7.3.5.1 VM Supply Undervoltage Lockout (UVLO)
        2. 7.3.5.2 VCP Charge-Pump Undervoltage Lockout (CPUV)
        3. 7.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 7.3.5.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.5.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 7.3.5.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 7.3.5.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 7.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 7.3.5.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.5.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 7.3.5.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 7.3.5.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 7.3.5.5 Gate Driver Fault (GDF)
        6. 7.3.5.6 Thermal Warning (OTW)
        7. 7.3.5.7 Thermal Shutdown (OTSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
          1. 7.5.1.1.1 SPI Format
    6. 7.6 Register Maps
      1. Table 1. DRV8304S Register Map
      2. 7.6.1    Status Registers (DRV8304S Only)
        1. 7.6.1.1 Fault Status Register 1 (Address = 0x00) [reset = 0x00]
          1. Table 11. Fault Status Register 1 Field Descriptions
        2. 7.6.1.2 Fault Status Register 2 (Address = 0x01) [reset = 0x00]
          1. Table 12. Fault Status Register 2 Field Descriptions
      3. 7.6.2    Control Registers (DRV8304S Only)
        1. 7.6.2.1 Driver Control Register (Address = 0x02) [reset = 0x00]
          1. Table 14. Driver Control Field Descriptions
        2. 7.6.2.2 Gate Drive HS Register (Address = 0x03) [reset = 0x377]
          1. Table 15. Gate Drive HS Field Descriptions
        3. 7.6.2.3 Gate Drive LS Register (Address = 0x04) [reset = 0x777]
          1. Table 16. Gate Drive LS Register Field Descriptions
        4. 7.6.2.4 OCP Control Register (Address = 0x05) [reset = 0x145]
          1. Table 17. OCP Control Field Descriptions
        5. 7.6.2.5 CSA Control Register (Address = 0x06) [reset = 0x283]
          1. Table 18. CSA Control Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Primary Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 External MOSFET Support
            1. 8.2.1.2.1.1 Example
          2. 8.2.1.2.2 IDRIVE Configuration
            1. 8.2.1.2.2.1 Example
          3. 8.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 8.2.1.2.3.1 Example
          4. 8.2.1.2.4 Sense-Amplifier Bidirectional Configuration
            1. 8.2.1.2.4.1 Example
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Alternative Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Sense-Amplifier Unidirectional Configuration
            1. 8.2.2.2.1.1 Example
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RHA|40
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.5.5 Gate Driver Fault (GDF)

The GHx and GLx pins are monitored such that if the voltage on the external MOSFET gate does not increase or decrease after the tDRIVE time, a gate driver fault is detected. This fault might be encountered if the GHx or GLx pins are shorted to the PGND, SHx, or VM pins. Additionally, a gate driver fault might be encountered if the selected IDRIVE setting is not sufficient to turn on the external MOSFET within the tDRIVE period. After a gate drive fault is detected, all external MOSFETs are disabled and the nFAULT pin is driven low. In addition, the FAULT, GDF, and corresponding VGS bits are latched high in the SPI registers. Normal operation resumes (gate driver operation and the nFAULT pin is released) when the gate-driver fault condition is removed and a clear fault command is issued either through the CLR_FLT bit or an ENABLE reset pulse (tRST). On the SPI device, setting the DIS_GDF_UVLO bit high disables this protection feature.

Gate driver faults can indicate that the selected IDRIVE or tDRIVE settings are too low to slew the external MOSFET in the desired time. Increasing either the IDRIVE or tDRIVE setting can resolve a gate driver fault in these cases. Alternatively, if a gate-to-source short occurs on the external MOSFET, a gate driver fault is reported because of the MOSFET gate not turning on.