SLVSGT3 December 2022 DRV8317
PRODUCTION DATA
The DRV8317 requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully because the output stages uses N-channel FETs for both high-side and low-side. The DRV8317 integrates a charge pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. See Table 8-1 for details on the capacitor value.
The charge pump shuts down when nSLEEP is low.