SLVSHC7 December   2023 DRV8334

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Functions 48-Pin DRV8334
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings DRV8334
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information DRV8334
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 SPI Timing Diagrams
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three BLDC Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 6x PWM Mode
          2. 7.3.1.1.2 3x PWM Mode with INLx enable control
          3. 7.3.1.1.3 3x PWM Mode with SPI enable control
          4. 7.3.1.1.4 1x PWM Mode
          5. 7.3.1.1.5 SPI Gate Drive Mode
        2. 7.3.1.2 Gate Drive Architecture
          1. 7.3.1.2.1 Bootstrap diode
          2. 7.3.1.2.2 GVDD Charge pump
          3. 7.3.1.2.3 VCP Trickle Charge pump
          4. 7.3.1.2.4 Gate Driver Output
          5. 7.3.1.2.5 Passive and Semi-active pull-down resistor
          6. 7.3.1.2.6 TDRIVE Gate Drive Timing Control
          7. 7.3.1.2.7 Propagation Delay
          8. 7.3.1.2.8 Deadtime and Cross-Conduction Prevention
      2. 7.3.2 Low-Side Current Sense Amplifiers
        1. 7.3.2.1 Unidirectional Current Sense Operation
        2. 7.3.2.2 Bidirectional Current Sense Operation
      3. 7.3.3 Gate Driver Shutdown
        1. 7.3.3.1 DRVOFF Gate Driver Shutdown
        2. 7.3.3.2 Gate Driver Shutdown Timing Sequence
      4. 7.3.4 Gate Driver Protective Circuits
        1. 7.3.4.1  PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 7.3.4.2  GVDD Undervoltage Lockout (GVDD_UV)
        3. 7.3.4.3  BST Undervoltage Lockout (BST_UV)
        4. 7.3.4.4  MOSFET VDS Overcurrent Protection (VDS_OCP)
        5. 7.3.4.5  VSENSE Overcurrent Protection (SEN_OCP)
        6. 7.3.4.6  Phase Comparators
        7. 7.3.4.7  Thermal Shutdown (OTSD)
        8. 7.3.4.8  Thermal Warning (OTW)
        9. 7.3.4.9  OTP CRC
        10. 7.3.4.10 SPI Watchdog Timer
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
      2. 7.4.2 Device Power Up Sequence
    5. 7.5 Programming
      1. 7.5.1 SPI
      2. 7.5.2 SPI Format
      3. 7.5.3 SPI Format Diagrams
    6. 7.6 Register Maps
      1. 7.6.1 STATUS Registers
      2. 7.6.2 CONTROL Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Application with 48-pin package
        1. 8.2.1.1 External Components
      2. 8.2.2 Application Curves
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.3.2 Gate Driver Shutdown Timing Sequence

The device initiates gate driver shutdown sequence as shown in figure. The shutdown drive current can be programmed with SPI register IDRVN_SD. The gate driver uses IDRVN_SDD for tDRVN_SDD time to discharge gate of MOSFET. The shutdown current changes to IDRVN_SD current and is hold until end of tDRVN_SD time. After completion of shutdown sequence, gate driver outputs are in semi-active pull-down mode.

GUID-20211020-SS0I-QD1H-HRLG-S3B2VVVFDXP9-low.svg Figure 7-15 Gate Drive Shutdown Sequence