SLVSE12A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
In independent MOSFET drive mode, the INHx and INLx pins control the outputs, GHx and GLx, respectively. This control mode lets the DRV8343-Q1 device drive separate high-side and low-side loads with each half-bridge. These types of loads include unidirectional brushed DC motors, solenoids, and low-side and high-side switches. In this mode, turning on both the high-side and low-side MOSFETs at the same time in a given half-bridge gate driver is possible to use the device as a high-side or low-side driver. The dead time (tDEAD) is bypassed in the mode and must be inserted by the external MCU.
INLx | INHx | GLx | GHx |
---|---|---|---|
0 | 0 | L | L |
0 | 1 | L | H |
1 | 0 | H | L |
1 | 1 | H | H |
Figure 12 shows how the DRV8343-Q1 device can be used to connect a high-side load and a low-side load at the same time with one half-bridge and drive the loads independently. In this mode, the VDS monitors are active for both the MOSFETs to protect from an overcurrent condition.
If the half-bridge is used to implement only a high-side or low-side driver, using the VDS monitors to help protect from an overcurrent condition is possible as shown in Figure 13 or Figure 14. The unused gate driver can stay disconnected.
Figure 15 shows how the DRV8343-Q1 device can be used to connect a solenoid load where both the high-side and low-side MOSFETs can be turned on at the same time to drive the load without causing shoot-through. TI recommends having the external diodes for current recirculation. If a half-bridge is not used, the gate pins (GHx and GLx) can stay unconnected and the sense pins (SHx and DLx) can be tied directly or with a resistor to GND.