SLVSDY6A August   2018  – June  2019 DRV8350 , DRV8350R , DRV8353 , DRV8353R

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—32-Pin DRV8350 Devices
    2.     Pin Functions—48-Pin DRV8350R Devices
    3.     Pin Functions—40-Pin DRV8353 Devices
    4.     Pin Functions—48-Pin DRV8353R Devices
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 8.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 8.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 8.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 8.3.1.2 Device Interface Modes
          1. 8.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 8.3.1.2.2 Hardware Interface
        3. 8.3.1.3 Gate Driver Voltage Supplies and Input Supply Configurations
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Propagation Delay
          4. 8.3.1.4.4 MOSFET VDS Monitors
          5. 8.3.1.4.5 VDRAIN Sense and Reference Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Low-Side Current-Shunt Amplifiers (DRV8353 and DRV8353R Only)
        1. 8.3.4.1 Bidirectional Current Sense Operation
        2. 8.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 8.3.4.3 Amplifier Calibration Modes
        4. 8.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 8.3.5 Step-Down Buck Regulator
        1. 8.3.5.1 Functional Block Diagram
        2. 8.3.5.2 Feature Description
          1. 8.3.5.2.1 Control Circuit Overview
          2. 8.3.5.2.2 Start-Up Regulator (VCC)
          3. 8.3.5.2.3 Regulation Comparator
          4. 8.3.5.2.4 Overvoltage Comparator
          5. 8.3.5.2.5 On-Time Generator and Shutdown
          6. 8.3.5.2.6 Current Limit
          7. 8.3.5.2.7 N-Channel Buck Switch and Driver
          8. 8.3.5.2.8 Thermal Protection
      6. 8.3.6 Gate Driver Protective Circuits
        1. 8.3.6.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
        2. 8.3.6.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
        3. 8.3.6.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 8.3.6.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.6.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 8.3.6.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 8.3.6.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 8.3.6.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 8.3.6.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.6.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 8.3.6.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 8.3.6.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 8.3.6.5 Gate Driver Fault (GDF)
        6. 8.3.6.6 Overcurrent Soft Shutdown (OCP Soft)
        7. 8.3.6.7 Thermal Warning (OTW)
        8. 8.3.6.8 Thermal Shutdown (OTSD)
        9. 8.3.6.9 Fault Response Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
      2. 8.4.2 Buck Regulator Functional Modes
        1. 8.4.2.1 Shutdown Mode
        2. 8.4.2.2 Active Mode
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
          1. 8.5.1.1.1 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 Fault Status Register 1 (address = 0x00h)
          1. Table 11. Fault Status Register 1 Field Descriptions
        2. 8.6.1.2 Fault Status Register 2 (address = 0x01h)
          1. Table 12. Fault Status Register 2 Field Descriptions
      2. 8.6.2 Control Registers
        1. 8.6.2.1 Driver Control Register (address = 0x02h)
          1. Table 14. Driver Control Field Descriptions
        2. 8.6.2.2 Gate Drive HS Register (address = 0x03h)
          1. Table 15. Gate Drive HS Field Descriptions
        3. 8.6.2.3 Gate Drive LS Register (address = 0x04h)
          1. Table 16. Gate Drive LS Register Field Descriptions
        4. 8.6.2.4 OCP Control Register (address = 0x05h)
          1. Table 17. OCP Control Field Descriptions
        5. 8.6.2.5 CSA Control Register (DRV8353 and DRV8353R Only) (address = 0x06h)
          1. Table 18. CSA Control Field Descriptions
        6. 8.6.2.6 Driver Configuration Register (DRV8353 and DRV8353R Only) (address = 0x07h)
          1. Table 19. Driver Configuration Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 MOSFET Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 IDRIVE Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 VDS Overcurrent Example
          4. 9.2.1.2.4 Sense-Amplifier Bidirectional Configuration (DRV8353 and DRV8353R)
            1. 9.2.1.2.4.1 Sense-Amplifier Example
          5. 9.2.1.2.5 Single Supply Power Dissipation
          6. 9.2.1.2.6 Single Supply Power Dissipation Example
          7. 9.2.1.2.7 Buck Regulator Configuration (DRV8350R and DRV8353R)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Alternative Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Sense Amplifier Unidirectional Configuration
            1. 9.2.2.2.1.1 Sense-Amplifier Example
            2. 9.2.2.2.1.2 Dual Supply Power Dissipation
            3. 9.2.2.2.1.3 Dual Supply Power Dissipation Example
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Buck-Regulator Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.1.3 Gate Driver Voltage Supplies and Input Supply Configurations

The high-side gate-drive voltage supply is created using a doubler charge pump that operates from the VM and VDRAIN voltage supply inputs. The charge pump allows the gate driver to correctly bias the high-side MOSFET gate with respect to the source across a wide input supply voltage range. The charge pump is regulated to keep a fixed output voltage of VVDRAIN + 10.5 V and supports an average output current of 25 mA. When VVM is less than 12 V, the charge pump operates in full doubler mode and generates VVCP = 2 × VVM – 1.5 V with respect to VVDRAIN when unloaded. The charge pump is continuously monitored for undervoltage to prevent under-driven MOSFET conditions.

The charge pump requires a X5R or X7R, 1-µF, 16-V ceramic capacitor between the VDRAIN and VCP pins to act as the storage capacitor. Additionally, a X5R or X7R, 47-nF, VDRAIN-rated ceramic capacitor is required between the CPH and CPL pins to act as the flying capacitor.

DRV8350 DRV8350R DRV8353 DRV8353R drv835x-charge-pump-arch.gifFigure 29. Charge Pump Architecture

The low-side gate drive voltage is created using a linear regulator that operates from the VM voltage supply input. The VGLS linear regulator allows the gate driver to correctly bias the low-side MOSFET gate with respect to ground. The VGLS linear regulator output is fixed at 14.5 V and further regulated to 11-V on the GLx outputs during operation. The VGLS regulator supports an output current of 25 mA. The VGLS linear regulator is monitored for undervoltage to prevent under driver MOSFET conditions. The VGLS linear regulator requires a X5R or X7R, 1-µF, 16-V ceramic capacitor between VGLS and GND.

Since the charge pump output is regulated to VVDRAIN + 10.5 V this allows for VM to be supplied either directly from the high voltage motor supply (up to 75 V) to support a single supply system or from a low voltage gate driver power supply derived from a switching or linear regulator to improve the device efficiency or utilize an externally available power supply. On the DRV8350R and DRV8353R devices the integrated buck regulator can be used to create the efficient low voltage supply for VM without the need for an additional regulator. Figure 30 and Figure 31 show examples of the DRV835x configured in either single supply or dual supply configuration.

DRV8350 DRV8350R DRV8353 DRV8353R drv835x-single-supply.gifFigure 30. Single Supply Example
DRV8350 DRV8350R DRV8353 DRV8353R drv835x-dual-supply.gifFigure 31. Dual Supply Example