SLVSFV1B August   2018  – August 2021 DRV8350F , DRV8353F

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions—32-Pin DRV8350F Devices
    2.     8
    3.     Pin Functions—40-Pin DRV8353F Devices
    4.     10
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 8.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 8.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 8.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 8.3.1.2 Device Interface Modes
          1. 8.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 8.3.1.2.2 Hardware Interface
        3. 8.3.1.3 Gate Driver Voltage Supplies and Input Supply Configurations
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Propagation Delay
          4. 8.3.1.4.4 MOSFET VDS Monitors
          5. 8.3.1.4.5 VDRAIN Sense and Reference Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Low-Side Current-Shunt Amplifiers (DRV8353F)
        1. 8.3.4.1 Bidirectional Current Sense Operation
        2. 8.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 8.3.4.3 Amplifier Calibration Modes
        4. 8.3.4.4 MOSFET VDS Sense Mode (SPI Only)
      5. 8.3.5 Gate Driver Protective Circuits
        1. 8.3.5.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
        2. 8.3.5.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
        3. 8.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 8.3.5.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.5.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 8.3.5.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 8.3.5.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 8.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 8.3.5.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.5.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 8.3.5.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 8.3.5.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 8.3.5.5 Gate Driver Fault (GDF)
        6. 8.3.5.6 Overcurrent Soft Shutdown (OCP Soft)
        7. 8.3.5.7 Thermal Warning (OTW)
        8. 8.3.5.8 Thermal Shutdown (OTSD)
        9. 8.3.5.9 Fault Response Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
          1. 8.5.1.1.1 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 Fault Status Register 1 (address = 0x00h)
        2. 8.6.1.2 Fault Status Register 2 (address = 0x01h)
      2. 8.6.2 Control Registers
        1. 8.6.2.1 Driver Control Register (address = 0x02h)
        2. 8.6.2.2 Gate Drive HS Register (address = 0x03h)
        3. 8.6.2.3 Gate Drive LS Register (address = 0x04h)
        4. 8.6.2.4 OCP Control Register (address = 0x05h)
        5. 8.6.2.5 CSA Control Register (DRV8353FOnly) (address = 0x06h)
        6. 8.6.2.6 Driver Configuration Register (DRV8353F Only) (address = 0x07h)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 MOSFET Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 IDRIVE Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 VDS Overcurrent Example
          4. 9.2.1.2.4 Sense-Amplifier Bidirectional Configuration (DRV8353F)
            1. 9.2.1.2.4.1 Sense-Amplifier Example
          5. 9.2.1.2.5 Single Supply Power Dissipation
          6. 9.2.1.2.6 Single Supply Power Dissipation Example
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Alternative Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Sense Amplifier Unidirectional Configuration
            1. 9.2.2.2.1.1 Sense-Amplifier Example
            2. 9.2.2.2.1.2 Dual Supply Power Dissipation
            3. 9.2.2.2.1.3 Dual Supply Power Dissipation Example
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control

The TDRIVE component is an integrated gate-drive state machine that provides automatic dead time insertion through switching handshaking, parasitic dV/dt gate turnon prevention, and MOSFET gate-fault detection.

The first component of the TDRIVE state machine is automatic dead-time insertion. Dead time is period of time between the switching of the external high-side and low-side MOSFETs to make sure that they do not cross conduct and cause shoot-through. The DRV835xF family of devices use VGS voltage monitors to measure the MOSFET gate-to-source voltage and determine the correct time to switch instead of relying on a fixed time value. This feature allows the gate-driver dead time to adjust for variation in the system such a temperature drift and variation in the MOSFET parameters. An additional digital dead time (tDEAD) can be inserted and is adjustable through the registers on SPI devices.

The automatic dead-time insertion has a limitation when the gate driver is transitioning from high-side MOSFET on to low-side MOSFET on when the phase current is coming into the external half-bridge. In this case, the high-side diode will conduct during the dead-time and hold up the switch-node voltage to VDRAIN. In this case, an additional delay of approximately 100-200 ns is introduced into the dead-time handshake. This is introduced due to the need to discharge the voltage present on the internal VGS detection circuit.

The second component focuses on parasitic dV/dt gate turnon prevention. To implement this, the TDRIVE state machine enables a strong pulldown ISTRONG current on the opposite MOSFET gate whenever a MOSFET is switching. The strong pulldown last for the TDRIVE duration. This feature helps remove parasitic charge that couples into the MOSFET gate when the half-bridge switch-node voltage slews rapidly.

The third component implements a gate-fault detection scheme to detect pin-to-pin solder defects, a MOSFET gate failure, or a MOSFET gate stuck-high or stuck-low voltage condition. This implementation is done with a pair of VGS gate-to-source voltage monitors for each half-bridge gate driver. When the gate driver receives a command to change the state of the half-bridge it starts to monitor the gate voltage of the external MOSFET. If at the end of the tDRIVE period the VGS voltage has not reached the correct threshold the gate driver will report a fault. To make sure that a false fault is not detected, a tDRIVE time should be selected that is longer than the time required to charge or discharge the MOSFET gate. The tDRIVE time does not increase the PWM time and will terminate if another PWM command is received while active. Additional details on the TDRIVE settings are described in the Section 8.6 section for SPI devices and in the Section 8.3.3 section for hardware interface devices.

Figure 8-16 shows an example of the TDRIVE state machine in operation.

GUID-A20A0732-419C-4C77-BB86-DD8F350C11C4-low.gifFigure 8-16 TDRIVE State Machine