SLVSHD4 October   2024 DRV8376

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 SPI Slave Mode Timings
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Output Stage
      2. 7.3.2  Control Modes
        1. 7.3.2.1 6x PWM Mode (PWM_MODE = 00b or 01b or MODE_SR Pin Tied to AGND or in Hi-Z)
        2. 7.3.2.2 3x PWM Mode (xPWM_MODE = 10b or 11b or MODE_SR Pin is Connected to GVDD or to GVDD with RMODE)
      3. 7.3.3  Device Interface Modes
        1. 7.3.3.1 Serial Peripheral Interface (SPI)
        2. 7.3.3.2 Hardware Interface
      4. 7.3.4  AVDD and GVDD Linear Voltage Regulator
      5. 7.3.5  Charge Pump
      6. 7.3.6  Slew Rate Control
      7. 7.3.7  Cross Conduction (Dead Time)
      8. 7.3.8  Propagation Delay
      9. 7.3.9  Pin Diagrams
        1. 7.3.9.1 Logic Level Input Pin (Internal Pulldown)
        2. 7.3.9.2 Logic Level Input Pin (Internal Pullup)
        3. 7.3.9.3 Open Drain Pin
        4. 7.3.9.4 Push Pull Pin
        5. 7.3.9.5 Four Level Input Pin
      10. 7.3.10 Current Sense Amplifiers
        1. 7.3.10.1 Current Sense Amplifier Operation
      11. 7.3.11 Active Demagnetization
        1. 7.3.11.1 Automatic Synchronous Rectification Mode (ASR Mode)
          1. 7.3.11.1.1 Automatic Synchronous Rectification in Commutation
          2. 7.3.11.1.2 Automatic Synchronous Rectification in PWM Mode
        2. 7.3.11.2 Automatic Asynchronous Rectification Mode (AAR Mode)
      12. 7.3.12 Cycle-by-Cycle Current Limit
        1. 7.3.12.1 Cycle by Cycle Current Limit with 100% Duty Cycle Input
      13. 7.3.13 Protections
        1. 7.3.13.1 VM Supply Undervoltage Lockout (RESET)
        2. 7.3.13.2 AVDD Undervoltage Protection (AVDD_UV)
        3. 7.3.13.3 GVDD Undervoltage Lockout (GVDD_UV)
        4. 7.3.13.4 VCP Charge Pump Undervoltage Lockout (CPUV)
        5. 7.3.13.5 Overvoltage Protections (OV)
        6. 7.3.13.6 Overcurrent Protection (OCP)
          1. 7.3.13.6.1 OCP Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.13.6.2 OCP Automatic Retry (OCP_MODE = 01b)
          3. 7.3.13.6.3 OCP Report Only (OCP_MODE = 10b)
          4. 7.3.13.6.4 OCP Disabled (OCP_MODE = 11b)
        7. 7.3.13.7 Thermal Warning (OTW)
        8. 7.3.13.8 Thermal Shutdown (OTS)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
      2. 7.4.2 DRVOFF functionality
    5. 7.5 SPI Communication
      1. 7.5.1 Programming
        1. 7.5.1.1 SPI Format
    6. 7.6 Register Map
      1. 7.6.1 STATUS Registers
      2. 7.6.2 CONTROL Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Power Supply Recommendations
      1. 8.2.1 Bulk Capacitance
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
      3. 8.3.3 Thermal Considerations
        1. 8.3.3.1 Power Dissipation
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
  • NLG|28
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.10.1 Current Sense Amplifier Operation

The SOx pin on the DRV8376 outputs an analog voltage proportional to the current flowing in the low-side FETs multiplied by the gain setting (GCSA). The gain setting is adjustable between four different levels which can be set by the GAIN pin (in the hardware device variant) or the GAIN bits (in the SPI device variant).

Figure 7-20 shows the internal architecture of the current sense amplifiers. The current sense is implemented with the sense FET on each low-side FET of the DRV8376 device. This current information is fed to the internal I/V converter, which generates the CSA output voltage on the SOX pin based on the voltage on the VREF pin and the Gain setting. The CSA output voltage can be calculated as :

Equation 4. DRV8376
DRV8376 Integrated Current Sense AmplifierFigure 7-20 Integrated Current Sense Amplifier

Figure 7-21 and Figure 7-22 show the detail of the amplifier operational range. In bi-directional operation, the amplifier output for 0V input is set at VREF/2. Any change in the differential input results in a corresponding change in the output times the CSA_GAIN factor. The amplifier has a defined linear region in which it can maintain operation.

DRV8376 Bidirectional Current Sense OutputFigure 7-21 Bidirectional Current Sense Output
DRV8376 Bidirectional Current Sense RegionsFigure 7-22 Bidirectional Current Sense Regions
Note: The current sense amplifier supports only capacitive load at the output. TI recommends connecting the low pass filter with the resistor and capacitor on the output of the current sense amplifier.
Note: The current sense amplifier supports dynamic gain change. The GAIN is sampled every 1ms through pin sensing in the HW variant and any GAIN change through SPI write (in the SPI variant). After receiving the GAIN change command, the new GAIN will be applied to all three current sense amplifiers on the next falling edge of any INLx signal.