SLOSE60B May 2020 – May 2022 DRV8424E , DRV8425E
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM, DVDD) | ||||||
IVM | VM operating supply current | nSLEEP = 1, No motor load | 5 | 6.5 | mA | |
IVMQ | VM sleep mode supply current | nSLEEP = 0 | 2 | 4 | μA | |
tSLEEP | Sleep time | nSLEEP = 0 to sleep-mode | 120 | μs | ||
tRESET | nSLEEP reset pulse | nSLEEP low to clear fault | 20 | 40 | μs | |
tWAKE | Wake-up time | nSLEEP = 1 to output transition | 0.8 | 1.2 | ms | |
tON | Turn-on time | VM > UVLO to output transition | 0.8 | 1.2 | ms | |
VDVDD | Internal regulator voltage | No external load, 6 V < VVM < 33 V | 4.75 | 5 | 5.25 | V |
No external load, VVM = 4.5 V |
4.2 |
4.35 |
V |
|||
CHARGE PUMP (VCP, CPH, CPL) | ||||||
VVCP | VCP operating voltage | 6 V < VVM < 33 V | VVM + 5 | V | ||
f(VCP) | Charge pump switching frequency | VVM > UVLO; nSLEEP = 1 | 360 | kHz | ||
LOGIC-LEVEL INPUTS (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP) | ||||||
VIL | Input logic-low voltage | 0 | 0.6 | V | ||
VIH | Input logic-high voltage | 1.5 | 5.5 | V | ||
VHYS | Input logic hysteresis | 150 | mV | |||
IIL | Input logic-low current | VIN = 0 V | –1 | 1 | μA | |
IIH | Input logic-high current | VIN = 5 V | 100 | μA | ||
tPD | Propagation delay | xPH, xEN, xINx input to current change | 800 | ns | ||
QUAD-LEVEL INPUTS (ADECAY, BDECAY, TOFF) | ||||||
VI1 | Input logic-low voltage | Tied to GND | 0 | 0.6 | V | |
VI2 | 330kΩ ± 5% to GND | 1 | 1.25 | 1.4 | V | |
VI3 | Input Hi-Z voltage | Hi-Z (>500kΩ to GND) | 1.8 | 2 | 2.2 | V |
VI4 | Input logic-high voltage | Tied to DVDD | 2.7 | 5.5 | V | |
IO | Output pull-up current | 10 | μA | |||
CONTROL OUTPUTS (nFAULT) | ||||||
VOL | Output logic-low voltage | IO = 5 mA | 0.5 | V | ||
IOH | Output logic-high leakage | –1 | 1 | μA | ||
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) | ||||||
RDS(ONH) | High-side FET on resistance (DRV8424E, DRV8424P) | TJ = 25 °C, IO = -1 A | 165 | 200 | mΩ | |
TJ = 125 °C, IO = -1 A | 250 | 300 | mΩ | |||
TJ = 150 °C, IO = -1 A | 280 | 350 | mΩ | |||
RDS(ONL) | Low-side FET on resistance (DRV8424E, DRV8424 | TJ = 25 °C, IO = 1 A | 165 | 200 | mΩ | |
TJ = 125 °C, IO = 1 A | 250 | 300 | mΩ | |||
TJ = 150 °C, IO = 1 A | 280 | 350 | mΩ | |||
RDS(ONH) | High-side FET on resistance (DRV8425E, DRV8425P) | TJ = 25 °C, IO = -1 A | 275 | 330 | mΩ | |
TJ = 125 °C, IO = -1 A | 410 | 500 | mΩ | |||
TJ = 150 °C, IO = -1 A | 460 | 580 | mΩ | |||
RDS(ONL) | Low-side FET on resistance (DRV8425E, DRV8425P) | TJ = 25 °C, IO = 1 A | 275 | 330 | mΩ | |
TJ = 125 °C, IO = 1 A | 410 | 500 | mΩ | |||
TJ = 150 °C, IO = 1 A | 460 | 580 | mΩ | |||
tSR | Output slew rate | VM = 24V, IO = 1 A, Between 10% and 90% | 240 | V/µs | ||
PWM CURRENT CONTROL (VREFA, VREFB) | ||||||
KV | Transimpedance gain | VREF = 3.3 V | 1.254 | 1.32 | 1.386 | V/A |
IVREF | VREF Leakage Current | VREF = 3.3 V | 8.25 | μA | ||
tOFF | PWM off-time | TOFF = 0 | 7 | μs | ||
TOFF = 1 | 16 | |||||
TOFF = Hi-Z | 24 | |||||
TOFF = 330 kΩ to GND | 32 | |||||
ΔITRIP | Current trip accuracy | IO = 2.5 A, 10% to 20% current setting | –8 | 12 | % | |
IO = 2.5 A, 20% to 40% current setting | –7 |
7 |
||||
IO = 2.5 A, 40% to 100% current setting | -5 | 5 | ||||
IO,CH | AOUT and BOUT current matching | IO = 2.5 A | –2.5 | 2.5 | % | |
PROTECTION CIRCUITS | ||||||
VUVLO | VM UVLO lockout | VM falling, UVLO falling | 4.1 | 4.25 | 4.35 | V |
VM rising, UVLO rising | 4.2 | 4.35 | 4.45 | |||
VUVLO,HYS | Undervoltage hysteresis | Rising to falling threshold | 100 | mV | ||
VCPUV | Charge pump undervoltage | VCP falling | VVM + 2 | V | ||
IOCP | Overcurrent protection (DRV8424E, DRV8424P) | Current through any FET | 4 | A | ||
IOCP | Overcurrent protection (DRV8425E, DRV8425P) | Current through any FET | 3.2 | A | ||
tOCP | Overcurrent deglitch time | 1.8 | μs | |||
TOTSD | Thermal shutdown | Die temperature TJ | 150 | 165 | 180 | °C |
THYS_OTSD | Thermal shutdown hysteresis | Die temperature TJ | 20 | °C |