SLOSE98A December 2022 – September 2023 DRV8461
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM, DVDD) | ||||||
IVM | VM operating supply current | ENABLE = 1, nSLEEP = 1, No motor load, VCC = External 5V | 5 | 7.5 | mA | |
ENABLE = 1, nSLEEP = 1, No motor load, VCC = DVDD | 8 | 11 | ||||
IVMQ | VM sleep mode supply current | nSLEEP = 0 | 2.5 | 5 | μA | |
tSLEEP | Sleep time | nSLEEP = 0 to sleep-mode | 120 | μs | ||
tRESET | nSLEEP reset pulse | nSLEEP low to clear fault | 20 | 40 | μs | |
tWAKE | Wake-up time | H/W interface, nSLEEP = 1 to output transition | 0.85 | 1.2 | ms | |
SPI interface, nSLEEP = 1 to SPI ready | 0.15 | 0.25 | ms | |||
tON | Turn-on time1 | VM > UVLO to output transition | 0.9 | 1.3 | ms | |
VDVDD | Internal regulator voltage | No external load, 6 V < VVM < 65 V | 4.75 | 5 | 5.25 | V |
No external load, VVM = 4.5 V | 4.2 | 4.42 | V | |||
CHARGE PUMP (VCP, CPH, CPL) | ||||||
VVCP | VCP operating voltage | 6 V < VVM < 65 V | VVM + 5 | V | ||
f VCP | Charge pump switching frequency | VVM > UVLO; nSLEEP = 1 | 357 | kHz | ||
fCLK | Internal digital clock frequency | VVM > UVLO; nSLEEP = 1 | 10 | MHz | ||
LOGIC-LEVEL INPUTS (STEP, DIR, MODE, DECAY1, nSCS, SCLK, SDI, nSLEEP) | ||||||
VIL | Input logic-low voltage | 0 | 0.6 | V | ||
VIH | Input logic-high voltage (all pins except DECAY1) | 1.5 | 5.5 | V | ||
VIH_DECAY1 | Input logic-high voltage (DECAY1 pin) | 2.7 | 5.5 | V | ||
VHYS | Input logic hysteresis (all pins except nSLEEP) | 100 | mV | |||
VHYS_SLEEP | nSLEEP logic hysteresis | 300 | mV | |||
IIL | Input logic-low current (all pins except nSCS) | VIN = 0 V | –1 | 1 | μA | |
IIL_nSCS | nSCS logic-low current | nSCS = 0V | 8 | 12 | μA | |
IIH | Input logic-high current (all pins except nSCS, 200k internal pull-down resistance) | VIN = DVDD | 50 | μA | ||
IIH_nSCS | nSCS logic-high current | nSCS = DVDD | 0.15 | μA | ||
TRI-LEVEL INPUTS (M0, DECAY0, ENABLE) | ||||||
VI1_tri | Input logic-low voltage | Tied to GND | 0 | 0.6 | V | |
VI2_tri | Input Hi-Z voltage | Hi-Z | 1.8 | 2 | 2.2 | V |
VI3_tri | Input logic-high voltage | Tied to DVDD | 2.7 | 5.5 | V | |
IO_tri | Output pull-up current | 10.5 | μA | |||
QUAD-LEVEL INPUTS (M1, TOFF) | ||||||
VI1_quad | Input logic-low voltage | Tied to GND | 0 | 0.6 | V | |
VI2_quad | Input second level voltage | 330kΩ ± 5% to GND | 1 | 1.25 | 1.4 | V |
VI3_quad | Input Hi-Z voltage | Hi-Z | 1.8 | 2 | 2.2 | V |
VI4_quad | Input logic-high voltage | Tied to DVDD | 2.7 | 5.5 | V | |
IO_quad | Output pull-up current | 10.5 | μA | |||
PUSH-PULL OUTPUT (SDO) | ||||||
RPD,SDO | Internal pull-down resistance | 5mA load, with respect to GND | 30 | 60 | Ω | |
RPU,SDO | Internal pull-up resistance | 5mA load, with respect to VCC | 60 | 110 | Ω | |
ISDO | SDO Leakage Current1 | VVM > 6 V, SDO = VCC and 0V | -2.5 | 2.5 | μA | |
CONTROL OUTPUTS (nFAULT, nHOME) | ||||||
VOL | Output logic-low voltage | IO = 5 mA | 0.35 | V | ||
IOH | Output logic-high leakage | -1 | 1 | μA | ||
MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) | ||||||
RDS(ONH) | High-side FET on resistance | TJ = 25 °C, IO = -3 A | 153 | 180 | mΩ | |
TJ = 125 °C, IO = -3 A | 225 | 285 | mΩ | |||
TJ = 150 °C, IO = -3 A | 255 | 325 | mΩ | |||
RDS(ONL) | Low-side FET on resistance | TJ = 25 °C, IO = 3 A | 150 | 185 | mΩ | |
TJ = 125 °C, IO = 3 A | 225 | 300 | mΩ | |||
TJ = 150 °C, IO = 3 A | 255 | 340 | mΩ | |||
ILEAK | Output leakage current to ground in Disable mode1 | H-bridges are Hi-Z, VVM = 65 V | 200 | μA | ||
tRF | Output rise/fall time | H/W interface, IO = 3 A, between 10% and 90% | 140 | ns | ||
SPI interface, SR = 0b, IO = 3 A, between 10% and 90% | 140 | |||||
SPI interface, SR = 1b, IO = 3 A, between 10% and 90% | 70 | |||||
tD | Output dead time | VM = 24V, IO = 3 A | 300 | ns | ||
PWM CURRENT CONTROL (VREF) | ||||||
KV | Transimpedance gain | VREF = 3.3 V | 1.064 | 1.12 | 1.176 | V/A |
IVREF | VREF Pin Leakage Current | VREF = 3.3 V | 40 | nA | ||
tOFF | PWM off-time | TOFF = 0 or TOFF = 00b | 9.5 | μs | ||
TOFF = 1 or TOFF = 01b | 19 | |||||
TOFF = Hi-Z or TOFF = 10b | 27 | |||||
TOFF = 330kΩ to GND or TOFF = 11b | 35 | |||||
ΔITRIP_EXT | Current trip accuracy, external VREF input | 10% to 20% full-scale current | -10 | 10 | % | |
20% to 100% full-scale current | -6 | 6 | ||||
ΔITRIP_INT | Current trip accuracy, internal VREF | 10% to 20% full-scale current | -10 | 10 | % | |
20% to 100% full-scale current | -7 | 7 | ||||
IO,CH | AOUT and BOUT current matching | 100% full-scale current | -3 | 3 | % | |
tBLK | Current regulation blanking time | SPI interface, TBLANK_TIME = 00b | 1 | μs | ||
H/W interface or SPI interface, TBLANK_TIME = 01b | 1.5 | |||||
SPI interface, TBLANK_TIME = 10b | 2 | |||||
SPI interface, TBLANK_TIME = 11b | 2.5 | |||||
tDEG | Current regulation deglitch time | 0.5 | μs | |||
PROTECTION CIRCUITS | ||||||
VMUVLO | VM UVLO lockout | VM falling | 4.1 | 4.25 | 4.36 | V |
VM rising | 4.2 | 4.37 | 4.47 | |||
VCCUVLO | VCC UVLO lockout | VCC connected to external voltage, VCC falling | 2.7 | 2.8 | 2.9 | V |
VCC connected to external voltage, VCC rising | 2.78 | 2.9 | 3.05 | |||
VUVLO,HYS | Undervoltage hysteresis | Rising to falling threshold | 100 | mV | ||
VRST | VM UVLO reset | VCC = DVDD, SPI interface, VM falling, device reset, no SPI communications | 3.4 | V | ||
VCPUV | Charge pump undervoltage | VCP falling | VVM + 2 | V | ||
IOCP | Overcurrent protection | Current through any FET | 4.8 | A | ||
tOCP | Overcurrent detection delay | H/W Interface | 2.2 | μs | ||
SPI Interface, TOCP = 0b | 1.2 | |||||
SPI Interface, TOCP = 1b | 2.2 | |||||
tRETRY | Overcurrent retry time | 4.1 | ms | |||
tOL | Open load detection time | H/W Interface | 60 | ms | ||
SPI Interface, OL_T = 00b | 30 | |||||
SPI Interface, OL_T = 01b | 60 | |||||
SPI Interface, OL_T = 10b | 120 | |||||
IOL | Open load current threshold | 110 | mA | |||
TOTW | Overtemperature warning | SPI Interface, Die temperature TJ | 135 | 150 | 165 | °C |
THYS_OTW | Overtemperature warning hysteresis | SPI Interface, Die temperature TJ | 20 | °C | ||
TOTSD | Thermal shutdown | Die temperature TJ | 150 | 165 | 180 | °C |
THYS_OTSD | Thermal shutdown hysteresis | Die temperature TJ | 20 | °C |
Guaranteed by design