SLVSC40H June 2013 – May 2020 DRV8711
PRODUCTION DATA.
It is critical to ensure that any external FETs used can support the PWM current chopping frequency desired. Equation 3 is used to calculate the maximum FET driving capability of the DRV8711:
In Equation 3, 2 × DTIME + TBLANK + TOFF is the worst-case scenario (smallest time period) for PWM current chopping (1/ƒPWM). Since the PWM current chopping frequency is not fixed, the desired ƒPWM only gives an estimate on the worst-case FET driving capacity.
DTIME is the dead-time inserted between turning off a low-side FET and turning on a high-side FET, or vice versa. During this time, both FETs are in High-Z, and current is conducted through the body diodes in asynchronous decay. It is recommended to leave DTIME as its default value unless the stepping speed is very high.
CTRL Register | Address = 0x00h |
Bit | Name | Size | R/W | Default | Description |
---|---|---|---|---|---|
11-10 | DTIME | 2 | R/W | 11 | Dead time set
00: 400 ns dead time 01: 450 ns dead time 10: 650 ns dead time |
11: 850 ns dead time |
TBLANK is the blanking time during PWM current chopping. This sets the minimum drive time (current is increasing) during the PWM cycle. At the beginning of the PWM cycle, the current trip value is ignored for TBLANK. In auto mixed decay mode, TBLANK is also the fast decay time if the current is higher than the current chopping level after the drive time. This value is explained more in the Blanking time section.
BLANK Register | Address = 0x03h |
Bit | Name | Size | R/W | Default | Description |
---|---|---|---|---|---|
7-0 | TBLANK | 8 | R/W | 0x80h | Sets current trip blanking time, in increments of 20 ns
0x00h: 1.00 µs … 0x32h: 1.00 µs 0x33h: 1.02 µs … 0xFEh: 5.10 µs 0xFFh: 5.12 µs Also sets minimum on-time of PWM |
TOFF sets the time that the driver is in a decay mode after the drive phase of PWM current chopping. This value is explained more in the Decay Modes section.
OFF Register | Address = 0x02h |
Bit | Name | Size | R/W | Default | Description |
---|---|---|---|---|---|
7-0 | TOFF | 8 | R/W | 0x30H | Sets fixed off time, in increments of 500 ns
0x00h: 500 ns 0xFFh: 128 µs |
The registers IDRIVEP, IDRIVEN, TDRIVEP, and TDRIVEN are set based on the gate charge of the external FETs used (Qg), and the desired rise time (RT). RT is the time it will take to charge the FET gate and turn on.
IDRIVEN / IDRIVEP and TDRIVEN / TDRIVEP should be selected to be the smallest settings that meet the requirements in Equation 10 and Equation 11.
DRIVE Register | Address = 0x06h |
Bit | Name | Size | R/W | Default | Description |
---|---|---|---|---|---|
5-4 | TDRIVEN | 2 | R/W | 01 | Gate drive sink time
00: 250 ns 01: 500 ns 10: 1 µs 11: 2 µs |
7-6 | TDRIVEP | 2 | R/W | 01 | Gate drive source time
00: 250 ns 01: 500 ns 10: 1 µs 11: 2 µs |
9-8 | IDRIVEN | 2 | R/W | 00 | Gate drive peak sink current
00: 100 mA peak (sink) 01: 200 mA peak (sink) 10: 300 mA peak (sink) 11: 400 mA peak (sink) |
11-10 | IDRIVEP | 2 | R/W | 00 | Gate drive peak source current
00: 50 mA peak (source) 01: 100 mA peak (source) 10: 150 mA peak (source) 11: 200 mA peak (source) |