SLVSC79D June 2014 – November 2020 DRV8801A-Q1
PRODUCTION DATA
First-order approximation of power dissipation in the DRV8801A-Q1 device can be calculated by examining the power dissipation in the full-bridge during each of the operation modes. The DRV8801A-Q1 device uses synchronous rectification. During the decay cycle, the body diode is shorted by the low-rDS(on) driver, which in turn reduces power dissipation in the full-bridge. In order to prevent shoot through (high-side and low-side drivers on the same side are ON at the same time), the DRV8801A-Q1 device implements a 500-ns typical crossover delay time. During this period, the body diode in the decay current path conducts the current until the DMOS driver turns on. High-current and high-ambient-temperature applications should take this into consideration. In addition, motor parameters and switching losses can add power dissipation that could affect critical applications.