SLVSAW5C July 2011 – November 2015 DRV8803
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VM | Power supply voltage | –0.3 | 65 | V |
VOUTx | Output voltage | –0.3 | 65 | V |
VCLAMP | Clamp voltage | –0.3 | 65 | V |
nFAULT | Output current | 20 | mA | |
Peak clamp diode current | 2 | A | ||
DC or RMS clamp diode current | 1 | A | ||
Digital input pin voltage | –0.5 | 7 | V | |
nFAULT | Digital output pin voltage | –0.5 | 7 | V |
Peak motor drive output current, t < 1 μS | Internally limited | A | ||
Continuous total power dissipation | See Thermal Information | |||
TJ | Operating virtual junction temperature | –40 | 150 | °C |
Tstg | Storage temperature | –60 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±3000 | V | |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|
VM | Power supply voltage | 8.2 | 60 | V | |||
VCLAMP | Output clamp voltage(2) | 0 | 60 | V | |||
IOUT | Continuous output current | SOIC package(1), TA = 25°C | Single channel on | 1.5 | A | ||
Four channels on | 0.8 | ||||||
HTSSOP package(1), TA = 25°C | Single channel on | 2 | |||||
Four channels on | 1 |
THERMAL METRIC(1) | DRV8803 | UNIT | ||
---|---|---|---|---|
DW (SOIC) | PWP (HTSSOP) | |||
20 PINS | 16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 67.7 | 39.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 32.9 | 24.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 35.4 | 20.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 8.2 | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 34.9 | 20.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 2.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES | ||||||
IVM | VM operating supply current | VM = 24 V | 1.6 | 2.1 | mA | |
VUVLO | VM undervoltage lockout voltage | VM rising | 8.2 | V | ||
LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS) | ||||||
VIL | Input low voltage | 0.6 | 0.7 | V | ||
VIH | Input high voltage | 2 | V | |||
VHYS | Input hysteresis | 0.45 | V | |||
IIL | Input low current | VIN = 0 | –20 | 20 | μA | |
IIH | Input high current | VIN = 3.3 V | 100 | μA | ||
RPD | Pulldown resistance | 100 | kΩ | |||
nFAULT OUTPUT (OPEN-DRAIN OUTPUT) | ||||||
VOL | Output low voltage | IO = 5 mA | 0.5 | V | ||
IOH | Output high leakage current | VO = 3.3 V | 1 | μA | ||
LOW-SIDE FETS | ||||||
RDS(ON) | FET on resistance | VM = 24 V, IO = 700 mA, TJ = 25°C | 0.5 | Ω | ||
VM = 24 V, IO = 700 mA, TJ = 85°C | 0.75 | 0.8 | ||||
IOFF | Off-state leakage current | –50 | 50 | μA | ||
HIGH-SIDE DIODES | ||||||
VF | Diode forward voltage | VM = 24 V, IO = 700 mA, TJ = 25°C | 1.2 | V | ||
IOFF | Off-state leakage current | VM = 24 V, TJ = 25°C | –50 | 50 | μA | |
OUTPUTS | ||||||
tR | Rise time | VM = 24 V, IO = 700 mA, Resistive load | 50 | 300 | ns | |
tF | Fall time | VM = 24 V, IO = 700 mA, Resistive load | 50 | 300 | ns | |
PROTECTION CIRCUITS | ||||||
IOCP | Overcurrent protection trip level | 2.3 | 3.8 | A | ||
tOCP | Overcurrent protection deglitch time | 3.5 | µs | |||
tRETRY | Overcurrent protection retry time | 1.2 | ms | |||
tTSD | Thermal shutdown temperature | Die temperature(1) | 150 | 160 | 180 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
1 | tOE(ENABLE) | Enable time, nENBL to output low | 50 | ns | |
2 | tPD(L-H) | Propagation delay time, INx to OUTx, low to high | 800 | ns | |
3 | tPD(H-L) | Propagation delay time, INx to OUTx, high to low | 800 | ns | |
— | tRESET | RESET pulse width | 20 | µs |