SLVS997G October   2009  – October 2015 DRV8812

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
    4. 7.4 Device Functional Modes
      1. 7.4.1 Bridge Control
      2. 7.4.2 Current Regulation
      3. 7.4.3 Decay Mode
      4. 7.4.4 Blanking Time
      5. 7.4.5 nRESET and nSLEEP Operation
      6. 7.4.6 Protection Circuits
        1. 7.4.6.1 Overcurrent Protection (OCP)
        2. 7.4.6.2 Thermal Shutdown (TSD)
        3. 7.4.6.3 Undervoltage Lockout (UVLO)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Current Regulation
        2. 8.2.2.2 Decay Modes
        3. 8.2.2.3 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supply and Logic Sequencing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Consideration
      1. 10.3.1 Thermal Protection
      2. 10.3.2 Power Dissipation
      3. 10.3.3 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
VMx Power supply voltage –0.3 47 V
VMx Power supply ramp rate 1 V/µs
Digital pin voltage –0.5 7 V
VREF Input voltage –0.3 4 V
ISENSEx pin voltage(4) –0.8 0.8 V
Peak motor drive output current, t < 1 μS Internally limited A
Continuous motor drive output current(3) 0 1.6 A
Continuous total power dissipation See Thermal Information
TJ Operating virtual junction temperature –40 150 °C
TA Operating ambient temperature –40 85 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Power dissipation and thermal limits must be observed.
(4) Transients of ±1 V for less than 25 ns are acceptable

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage range(1) 8.2 45 V
VREF VREF input voltage(2) 1 3.5 V
IV3P3 V3P3OUT load current 1 mA
(1) All VM pins must be connected to the same supply voltage.
(2) Operational at VREF between 0 V and 1 V, but accuracy is degraded.

6.4 Thermal Information

THERMAL METRIC(1) DRV8812 UNIT
PWP (HTSSOP) RHD
(VQFN)
28 PINS 28 PINS
RθJA Junction-to-ambient thermal resistance 38.9 35.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 23.3 25.1 °C/W
RθJB Junction-to-board thermal resistance 21.2 8.2 °C/W
ψJT Junction-to-top characterization parameter 0.8 0.3 °C/W
ψJB Junction-to-board characterization parameter 20.9 8.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.6 1.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 24 V, fPWM < 50 kHz 5 8 mA
IVMQ VM sleep mode supply current VM = 24 V 10 20 μA
VUVLO VM undervoltage lockout voltage VM rising 7.8 8.2 V
V3P3OUT REGULATOR
V3P3 V3P3OUT voltage IOUT = 0 to 1 mA, VM = 24 V, TJ = 25°C 3.18 3.30 3.42 V
IOUT = 0 to 1 mA 3.10 3.30 3.50 V
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.6 0.7 V
VIH Input high voltage 2 5.25 V
VHYS Input hysteresis 0.45 V
IIL Input low current VIN = 0 –20 20 μA
IIH Input high current VIN = 3.3 V 100 μA
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 μA
DECAY INPUT
VIL Input low threshold voltage For slow decay mode 0 0.8 V
VIH Input high threshold voltage For fast decay mode 2 V
IIN Input current ±40 µA
H-BRIDGE FETS
RDS(ON) HS FET on resistance VM = 24 V, I O = 1 A, TJ = 25°C 0.63 Ω
VM = 24 V, IO = 1 A, TJ = 85°C 0.76 0.90 Ω
RDS(ON) LS FET on resistance VM = 24 V, IO = 1 A, TJ = 25°C 0.65 Ω
VM = 24 V, IO = 1 A, TJ = 85°C 0.78 0.90 Ω
IOFF Off-state leakage current –20 20 μA
MOTOR DRIVER
fPWM Internal PWM frequency 50 kHz
tBLANK Current sense blanking time 3.75 μs
tR Rise time VM = 24 V 100 360 ns
tF Fall time VM = 24 V 80 250 ns
tDEAD Dead time 400 ns
tDEG Input deglitch time 1.3 2.9 µs
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 1.8 5 A
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C
CURRENT CONTROL
IREF xVREF input current xVREF = 3.3 V –3 3 μA
VTRIP xISENSE trip voltage xVREF = 3.3 V, 100% current setting 635 660 685 mV
xVREF = 3.3 V, 71% current setting 445 469 492 mV
xVREF = 3.3 V, 38% current setting 225 251 276 mV
AISENSE Current sense amplifier gain Reference only 5 V/V

6.6 Typical Characteristics

DRV8812 C001_SLVSCH0.png
Figure 1. IVMx vs V(VMx)
DRV8812 C003_SLVSCH0.png
Figure 3. RDS(ON) vs V(VMx)
DRV8812 C002_SLVSCH0.png
Figure 2. IVMxQ vs V(VMx)
DRV8812 C004_SLVSCH0.png
Figure 4. RDS(ON) vs Temperature