POWER AND GROUND |
CP1 |
11 |
PWR |
Charge pump switching node |
Connect a 0.1-µF X7R capacitor rated for VBB between CP1 and CP2 |
CP2 |
12 |
— |
GND |
4, 13, PPAD |
PWR |
Device ground |
Connect to system ground |
VBB |
9 |
PWR |
Power supply input |
Connect to main power supply. Bypass to GND with a 0.1-µF ceramic capacitor and a larger bulk capacitor rated for at least the VBB voltage |
VCP |
14 |
PWR |
Charge pump output |
Connect a 0.1-µF 16-V ceramic capacitor between VCP and VBB |
CONTROL |
EN1 |
6 |
I |
½-H bridge enable |
Logic high enables ½-H bridge output; logic low puts the FETs in HI-Z; internal pull-down |
EN2 |
2 |
IN1 |
3 |
I |
½-H bridge control |
Logic high enables the high-side ½-H bridge FET; logic low enables the low side FET; internal pull-down |
IN2 |
16 |
nFAULT |
1 |
O |
Fault indication pin |
Pulled logic low with fault condition; open-drain output requires an external pull-up. This output is indeterminate in sleep mode |
nSLEEP |
5 |
I |
Device sleep mode |
Pull logic low to put device into a low-power sleep mode; internal pull-down |
OUTPUT |
OUT1 |
7 |
O |
½-H bridge output |
OUT2 |
10 |
O |
½-H bridge output |
SENSE |
8 |
O |
H-bridge low-side connect |
Connect directly to GND or through a sense resistor to set OCP |
VPROPI |
VPROPI |
15 |
O |
Current-proportional output |