SLVSAX9E September   2011  – January 2016 DRV8818

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Motor Driver Timing Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM H-Bridge Drivers
      2. 7.3.2 Current Regulation
      3. 7.3.3 Decay Mode
      4. 7.3.4 Microstepping Indexer
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 Overcurrent Protection (OCP)
        2. 7.3.5.2 Thermal Shutdown (TSD)
        3. 7.3.5.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 RESETn, ENABLEn, and SLEEPn Operation
      2. 7.4.2 Decay Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stepper Motor Speed
        2. 8.2.2.2 Current Regulation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Heatsinking
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2) (3)
MIN MAX UNIT
VMX Power supply voltage –0.3 35 V
VCC Power supply voltage –0.3 7 V
Digital pin voltage –0.5 7 V
VREF Input voltage 0 VCC V
ISENSEx(4) Pin voltage –0.875 0.875 V
IO(peak) Peak motor drive output current Internally limited
PD Continuous total power dissipation See Thermal Information
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Power dissipation and thermal limits must be observed.
(4) Transients of ±1V for less than 25ns are acceptable.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage(1) 8 35 V
VCC Logic power supply voltage 3 5.5 V
VREF VREF input voltage 0 VCC V
RX RX resistance value 12 56 100 kΩ
CX CX capacitance value 470 680 1500 pF
(1) All VM pins must be connected to the same supply voltage.

6.4 Thermal Information

THERMAL METRIC(1) DRV8818 UNIT
PWP (HTSSOP)
28 PINS
RθJA Junction-to-ambient thermal resistance 32.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 16.3 °C/W
RθJB Junction-to-board thermal resistance 14 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 13.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 35 V, fPWM < 50 KHz 7 10 mA
IVCC VCC operating supply current fPWM < 50 KHz 0.4 4 mA
IVMQ VM sleep mode supply current VM = 35 V 3 20 μA
IVCCQ VCC sleep mode supply current 0.5 20 μA
VUVLO VM undervoltage lockout voltage VM rising 6.7 7.5 V
VCC undervoltage lockout voltage VCC rising 2.75 2.95
VREF INPUT/CURRENT CONTROL ACCURACY
IREF VREF input current VREF = 3.3 V –3 3 μA
ΔICHOP Chopping current accuracy VREF = 2.0 V, 70% to 100% current –5% 5%
VREF = 2.0 V, 20% to 56% current –10% 10%
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.3 × VCC V
VIH Input high voltage 0.7 × VCC V
VHYS Input hysteresis 300 mV
IIL Input low current VIN = 0.3 × VCC –20 20 μA
IIH Input high current VIN = 0.3 × VCC –20 20 μA
RPU Pullup resistance ENABLEn, RESETn 1 MΩ
RPD Pulldown resistance DIR, STEP, SLEEPn, USM1, USM0, SRn 1 MΩ
HOMEn OUTPUT
VOL Output low voltage IO = 200 μA 0.3 × VCC V
VOH Output high voltage IO = –200 μA 0.7 × VCC V
DECAY INPUT
VIL Input low threshold voltage For fast decay mode 0.21 × VCC V
VIH Input high threshold voltage For slow decay mode 0.6 × VCC V
H-BRIDGE FETS
Rds(on) HS FET on resistance VM = 24 V, IO = 2.5 A, TJ = 25°C 0.22 0.30 Ω
Rds(on) LS FET on resistance VM = 24 V, IO = 2.5 A, TJ = 25°C 0.15 0.24 Ω
IOFF –20 20 μA
PROTECTION CIRCUITS
TTSD Thermal shutdown temperature Die temperature 150 160 180 °C
IOCP Overcurrent protection level 3.5 A
tOCP OCP deglitch time 1.5 µs
tRET OCP retry time 800 µs

6.6 Timing Requirements

TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
1 fSTEP Step frequency 500 kHz
2 tWH(STEP) Pulse duration, STEP high 1 μs
3 tWL(STEP) Pulse duration, STEP low 1 μs
4 tSU(STEP) Setup time, command before STEP rising 200 ns
5 tH(STEP) Hold time, command after STEP rising 200 ns
6 tWAKE Wakeup time, SLEEPn inactive high to STEP input accepted 1 ms
7 tSLEEP Sleep time, SLEEPn active low to outputs disabled 5 μs
8 tENABLE Enable time, ENABLEn inactive high to outputs enabled 20 μs
9 tDISABLE Disable time, ENABLEn active low to outputs disabled 20 μs
10 tRESETR Reset release time, RESETn inactive high to outputs enabled 5 μs
11 tRESET Reset time, RESETn active low to outputs disabled 5 μs

6.7 Motor Driver Timing Switching Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tOFF Off time Rx = 56 kΩ, Cx = 680 pF 35 44 53 μs
tBLANK Current sense blanking time Rx = 56 kΩ, Cx = 680 pF 900 1250 1500 ns
tDT Dead time SRn = 0 100 475 800 ns
tR Rise time 10 80 ns
tF Fall time 10 80 ns
DRV8818 td2_slvs865.gif Figure 1. Timing Diagram

6.8 Typical Characteristics

DRV8818 D001_SLVSAX9.gif
Figure 2. IVM vs Temperature
DRV8818 D003_SLVSAX9.gif
Figure 4. RDS(ON) HS + LS vs Temperature
DRV8818 D002_SLVSAX9.gif
Figure 3. IVMQ vs Temperature
DRV8818 D004_SLVSAX9.gif
Figure 5. RDS(ON) HS + LS vs VM