SLVS913E January   2009  – January 2016 DRV8823

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Dissipation Ratings
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
    4. 7.4 Device Functional Modes
      1. 7.4.1 Bridge Control
      2. 7.4.2 Current Regulation
      3. 7.4.3 Blanking Time
      4. 7.4.4 Decay Mode
      5. 7.4.5 Protection Circuits
        1. 7.4.5.1 OCP
        2. 7.4.5.2 Thermal Shutdown (TSD)
        3. 7.4.5.3 Undervoltage Lockout (UVLO)
        4. 7.4.5.4 Shoot-Through Current Prevention
      6. 7.4.6 Serial Data Transmission
      7. 7.4.7 Data Format
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
      3. 8.2.3 Drive Current
      4. 8.2.4 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
      2. 10.3.2 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)(1) (2)
MIN MAX UNIT
VM Power supply voltage –0.3 34 V
VI Logic input voltage(4) –0.5 5.75 V
IO(peak) Peak motor drive output current, t < 1 μs Internally limited
IO Motor drive output current(3) 1.5 A
PD Continuous total power dissipation See Dissipation Ratings
TJ Operating virtual junction temperature –40 150 °C
TA Operating ambient temperature –40 85 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Power dissipation and thermal limits must be observed.
(4) Input pins may be driven in this voltage range regardless of presence or absence of VM.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage range 8 32 V
IMOT Continuous motor drive output current(1) 1 1.5 A
VREF VREF input voltage(2) 1 4 V
(1) Power dissipation and thermal limits must be observed.
(2) Operational at VREF between 0 and 1 V, but accuracy is degraded.

6.4 Thermal Information

THERMAL METRIC(1) DRV8823 UNIT
DCA (HTSSOP)
48 PINS
RθJA Junction-to-ambient thermal resistance 31.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 16.3 °C/W
RθJB Junction-to-board thermal resistance 15 °C/W
ψJT Junction-to-top characterization parameter 0.6 °C/W
ψJB Junction-to-board characterization parameter 14.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 24 V, no loads 5 8 mA
VUVLO VM undervoltage lockout voltage VM rising 6.5 8 V
VCP Charge pump voltage Relative to VM 12 V
VV3P3 VV3P3 output voltage 3.2 3.3 3.4 V
LOGIC-LEVEL INPUTS (INTERNAL PULLDOWNS)
VIL Input low voltage 0.7 V
VIH Input high voltage 2 V
VHYS Input hysteresis 0.3 0.45 0.6 V
IIN Input current
(internal pulldown current)		 VIN = 3.3 V 100 μA
OVERTEMPERATURE PROTECTION
TTSD Thermal shutdown temperature Die temperature 150 °C
MOTOR DRIVERS
Rds(on) Motor 1 FET on resistance
(each individual FET)		 VM = 24 V, IO = 0.8 A, TJ = 25°C 0.25 Ω
VM = 24 V, IO = 0.8 A, TJ = 85°C 0.31 0.37
Rds(on) Motor 2 FET on resistance
(each individual FET)		 VM = 24 V, IO = 0.8 A, TJ = 25°C 0.3 Ω
VM = 24 V, IO = 0.8 A, TJ = 85°C 0.38 0.45
IOFF Off-state leakage current ±12 μA
fPWM Motor PWM frequency(1) 45 50 55 kHz
tBLANK ITRIP blanking time(2) 3.75 μs
tF Output fall time 50 300 ns
tR Output rise time 50 300 ns
IOCP Overcurrent protect level 1.5 3 4.5 A
tOCP Overcurrent protect trip time 2.5 μs
tMD Mixed decay percentage Measured from beginning of PWM cycle 75%
CURRENT CONTROL
IREF xVREF input current xVREF = 3.3 V –3 3 μA
ΔICHOP Chopping current accuracy xVREF = 2.5 V, derived from V3P3; 71% to 100% current –5% 5%
xVREF = 2.5 V, derived from V3P3; 20% to 56% current –10% 10%
(1) Factory option 100 kHz.
(2) Factory options for 2.5, 5, or 6.25 μs.

6.6 Timing Requirements

over operating free-air temperature range (unless otherwise noted)
NO. MIN MAX UNIT
1 tCYC Clock cycle time 62 ns
2 tCLKH Clock high time 25 ns
3 tCLKL Clock low time 25 ns
4 tSU(SDATA) Setup time, SDATA to SCLK 5 ns
5 tH(DATA) Hold time, SDATA to SCLK 1 ns
6 tSU(SCS) Setup time, SCS to SCLK 5 ns
7 tH(SCS) Hold time, SCS to SCLK 1 ns

6.7 Dissipation Ratings

BOARD PACKAGE RθJA DERATING FACTOR
ABOVE TA = 25°C		 TA < 25°C TA = 70°C TA = 85°C
Low-K(1) DCA 75.7°C/W 13.2 mW/°C 1.65 W 1.06 W 0.86 W
Low-K(2) 32°C/W 31.3 mW/°C 3.91 W 2.50 W 2.03 W
High-K(3) 30.3°C/W 33 mW/°C 4.13 W 2.48 W 2.15 W
High-K(4) 22.3°C/W 44.8 mW/°C 5.61 W 3.59 W 2.91 W
(1) The JEDEC low-K board used to derive this data was a 76-mm × 114-mm, 2-layer, 1.6-mm thick PCB with no backside copper.
(2) The JEDEC low-K board used to derive this data was a 76-mm × 114-mm, 2-layer, 1.6-mm thick PCB with 25-cm2, 2-oz copper on back side.
(3) The JEDEC high-K board used to derive this data was a 76-mm × 114-mm, 4-layer, 1.6-mm thick PCB with no backside copper and solid 1-oz internal ground plane.
(4) The JEDEC high-K board used to derive this data was a 76-mm × 114-mm, 4-layer, 1.6-mm thick PCB with 25-cm2, 1-oz copper on backside and solid 1-oz internal ground plane.
DRV8823 timimg_lvs913.gif Figure 1. Timing Diagram

6.8 Typical Characteristics

DRV8823 C001_SLVS912.png
Figure 2. Supply Current vs Temperature
DRV8823 C005_SLVS912.png
Figure 4. Charge Pump Voltage vs Temperature
DRV8823 C007_SLVS912.png
Figure 6. LS Rdson Aout2 vs Temperature
DRV8823 C009_SLVS912.png
Figure 8. HS Rdson Aout2 vs Temperature
DRV8823 C002_SLVS912.png
Figure 3. Supply Current vs Supply Voltage
DRV8823 C006_SLVS912.png
Figure 5. Charge Pump Voltage vs Supply Voltage
DRV8823 C008_SLVS912.png
Figure 7. LS Rdson Aout1 vs Temperature
DRV8823 C010_SLVS912.png
Figure 9. HS Rdson Aout1 vs Temperature