SLVSAR1E January 2011 – July 2015 DRV8833
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.