SLVSBN4C January   2013  – August 2016 DRV8839

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Protection Circuits
        1. 7.3.1.1 Overcurrent Protection (OCP)
        2. 7.3.1.2 Thermal Shutdown (TSD)
        3. 7.3.1.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Bridge Control
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Motor Connections
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Low-Power Operation
        3. 8.2.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Power supply voltage, VM –0.3 12 V
Power supply voltage, VCC –0.3 7 V
Digital input pin voltage –0.5 7 V
Peak motor drive output current Internally limited A
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VCC Device power supply voltage 1.8 7 V
VM Motor power supply voltage 0 11 V
VIN Logic level input voltage 0 5.5 V
IOUT H-bridge output current (1) 0 1.8 A
fPWM Externally applied PWM frequency 0 250 kHz
(1) Power dissipation and thermal limits must be observed.

6.4 Thermal Information

THERMAL METRIC(1) DRV8839 UNIT
DSS (WSON)
12 PINS
RθJA Junction-to-ambient thermal resistance 50.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 58 °C/W
RθJB Junction-to-board thermal resistance 19.9 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 20 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

TA = 25°C, VM = 5 V, VCC = 3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
IVM VM operating supply current No PWM 40 100 µA
50 kHz PWM 0.8 1.5 mA
IVMQ VM sleep mode supply current nSLEEP = 0 V 30 95 nA
IVCC VCC operating supply current No PWM 300 500 µA
50 kHz PWM 0.7 1.5 mA
IVCCQ VCC sleep mode supply current nSLEEP = 0 V 5 25 nA
VUVLO VCC undervoltage lockout voltage VCC rising 1.8 V
VCC falling 1.7
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.31 × VCC 0.34 × VCC V
VIH Input high voltage 0.39 × VCC 0.43 × VCC V
VHYS Input hysteresis 0.08 × VCC V
IIL Input low current VIN = 0 –5 5 μA
IIH Input high current VIN = 3.3 V 50 μA
RPD Pulldown resistance 100
H-BRIDGE FETS
RDS(ON) HS + LS FET on resistance I O = 800 mA, TJ = 25°C 280 330
IOFF OFF-state leakage current ±200 nA
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 1.9 3.5 A
tOCR Overcurrent protection retry time 1 ms
tDEAD Output dead time 100 ns
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C

6.6 Timing Requirements (1)

TA = 25°C, VM = 5 V, VCC = 3 V, RL = 20 Ω
MIN MAX UNIT
1 t1 Output enable time 120 ns
2 t2 Output disable time 120 ns
3 t3 Delay time, INx high to OUTx high 120 ns
4 t4 Delay time, INx low to OUTx low 120 ns
5 t5 Output rise time 50 150 ns
6 t6 Output fall time 50 150 ns
(1) Not production tested – ensured by design
DRV8839 timing_lvsbn4.gif Figure 1. Timing Requirements

6.7 Typical Characteristics

DRV8839 D001_SLVSBN4.gif Figure 2. RDS(ON) HS + LS vs Temperature
DRV8839 D003_SLVSBN4.gif Figure 4. IVCCQ vs VVCC
DRV8839 D005_SLVSBN4.gif Figure 6. IVCC vs VVCC (No PWM)
DRV8839 D002_SLVSBN4.gif Figure 3. IVMQ vs VVM
DRV8839 D004_SLVSBN4.gif Figure 5. IVM vs VVM (No PWM)