6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)(2)
|
MIN |
MAX |
UNIT |
|
Power supply voltage, VM |
–0.3 |
12 |
V |
|
Power supply voltage, VCC |
–0.3 |
7 |
V |
|
Digital input pin voltage |
–0.5 |
7 |
V |
|
Peak motor drive output current |
Internally limited |
A |
TJ |
Operating junction temperature |
–40 |
150 |
°C |
Tstg |
Storage temperature |
–60 |
150 |
°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
|
VALUE |
UNIT |
V(ESD) |
Electrostatic discharge |
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) |
±4000 |
V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) |
±1500 |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
|
MIN |
NOM |
MAX |
UNIT |
VCC |
Device power supply voltage |
1.8 |
|
7 |
V |
VM |
Motor power supply voltage |
0 |
|
11 |
V |
VIN |
Logic level input voltage |
0 |
|
5.5 |
V |
IOUT |
H-bridge output current (1) |
0 |
|
1.8 |
A |
fPWM |
Externally applied PWM frequency |
0 |
|
250 |
kHz |
(1) Power dissipation and thermal limits must be observed.
6.4 Thermal Information
THERMAL METRIC(1) |
DRV8839 |
UNIT |
DSS (WSON) |
12 PINS |
RθJA |
Junction-to-ambient thermal resistance |
50.4 |
°C/W |
RθJC(top) |
Junction-to-case (top) thermal resistance |
58 |
°C/W |
RθJB |
Junction-to-board thermal resistance |
19.9 |
°C/W |
ψJT |
Junction-to-top characterization parameter |
0.9 |
°C/W |
ψJB |
Junction-to-board characterization parameter |
20 |
°C/W |
RθJC(bot) |
Junction-to-case (bottom) thermal resistance |
6.9 |
°C/W |
6.5 Electrical Characteristics
TA = 25°C, VM = 5 V, VCC = 3 V (unless otherwise noted)
PARAMETER |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
POWER SUPPLY |
IVM |
VM operating supply current |
No PWM |
|
40 |
100 |
µA |
50 kHz PWM |
|
0.8 |
1.5 |
mA |
IVMQ |
VM sleep mode supply current |
nSLEEP = 0 V |
|
30 |
95 |
nA |
IVCC |
VCC operating supply current |
No PWM |
|
300 |
500 |
µA |
50 kHz PWM |
|
0.7 |
1.5 |
mA |
IVCCQ |
VCC sleep mode supply current |
nSLEEP = 0 V |
|
5 |
25 |
nA |
VUVLO |
VCC undervoltage lockout voltage |
VCC rising |
|
|
1.8 |
V |
VCC falling |
|
|
1.7 |
LOGIC-LEVEL INPUTS |
VIL |
Input low voltage |
|
0.31 × VCC |
0.34 × VCC |
|
V |
VIH |
Input high voltage |
|
|
0.39 × VCC |
0.43 × VCC |
V |
VHYS |
Input hysteresis |
|
|
0.08 × VCC |
|
V |
IIL |
Input low current |
VIN = 0 |
–5 |
|
5 |
μA |
IIH |
Input high current |
VIN = 3.3 V |
|
|
50 |
μA |
RPD |
Pulldown resistance |
|
|
100 |
|
kΩ |
H-BRIDGE FETS |
RDS(ON) |
HS + LS FET on resistance |
I O = 800 mA, TJ = 25°C |
|
280 |
330 |
mΩ |
IOFF |
OFF-state leakage current |
|
|
|
±200 |
nA |
PROTECTION CIRCUITS |
IOCP |
Overcurrent protection trip level |
|
1.9 |
|
3.5 |
A |
tOCR |
Overcurrent protection retry time |
|
|
1 |
|
ms |
tDEAD |
Output dead time |
|
|
100 |
|
ns |
tTSD |
Thermal shutdown temperature |
Die temperature |
150 |
160 |
180 |
°C |
6.6 Timing Requirements (1)
TA = 25°C, VM = 5 V, VCC = 3 V, RL = 20 Ω
|
MIN |
MAX |
UNIT |
1 |
t1 |
Output enable time |
|
120 |
ns |
2 |
t2 |
Output disable time |
|
120 |
ns |
3 |
t3 |
Delay time, INx high to OUTx high |
|
120 |
ns |
4 |
t4 |
Delay time, INx low to OUTx low |
|
120 |
ns |
5 |
t5 |
Output rise time |
50 |
150 |
ns |
6 |
t6 |
Output fall time |
50 |
150 |
ns |
(1) Not production tested – ensured by design
6.7 Typical Characteristics
Figure 2. RDS(ON) HS + LS vs Temperature
Figure 3. IVMQ vs VVM