The DRV8842 provides an integrated motor driver solution for printers, scanners, and other automated equipment applications. The device has one H-bridge driver, and is intended to drive one DC motor, one coil of a stepper motor, or other loads. The output driver block consists of N-channel power MOSFETs configured as an H-bridge. The DRV8842 can supply up to 5-A peak or 3.5-A RMS output current (with proper heatsinking at 24 V and 25°C).
Separate inputs to independently control each half of the H-bridge are provided.
Internal shutdown functions are provided for overcurrent protection, short-circuit protection, undervoltage lockout, and overtemperature.
TheDRV8842 is available in a 28-pin HTSSOP package with PowerPAD™ (Eco-friendly: RoHS & no Sb/Br).
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
DRV8842 | HTSSOP (28) | 9.70 mm × 4.40 mm |
Changes from F Revision (December 2015) to G Revision
Changes from E Revision (August 2013) to F Revision
PIN | TYPE(1) | DESCRIPTION | EXTERNAL COMPONENTS OR CONNECTIONS |
|
---|---|---|---|---|
NAME | NO. | |||
POWER AND GROUND | ||||
GND | 14, 28 | — | Device ground | |
VM | 4, 11 | — | Bridge A power supply | Connect to motor supply (8.2 - 45 V). Both pins must be connected to same supply. |
V3P3OUT | 15 | O | 3.3-V regulator output | Bypass to GND with a 0.47-μF, 6.3-V ceramic capacitor. Can be used to supply VREF. |
CP1 | 1 | IO | Charge pump flying capacitor | Connect a 0.01-μF 50-V capacitor between CP1 and CP2. |
CP2 | 2 | IO | Charge pump flying capacitor | |
VCP | 3 | IO | High-side gate drive voltage | Connect a 0.1-μF 16-V ceramic capacitor and a 1-MΩ resistor to VM. |
CONTROL | ||||
IN1 | 21 | I | Input 1 | Logic input controls state of OUT1. Internal pulldown. |
IN2 | 20 | I | Input 2 | Logic input controls state of OUT2. Internal pulldown. |
I0 | 23 | I | Current set inputs | Sets winding current as a percentage of full-scale. Internal pulldown. |
I1 | 24 | I | ||
I2 | 25 | I | ||
I3 | 26 | I | ||
I4 | 27 | I | ||
DECAY | 19 | I | Decay mode | Low = slow decay, open = mixed decay, high = fast decay. Internal pulldown and pullup. |
nRESET | 16 | I | Reset input | Active-low reset input initializes the logic and disables the H-bridge outputs. Internal pulldown. |
nSLEEP | 17 | I | Sleep mode input | Logic high to enable device, logic low to enter low-power sleep mode. Internal pulldown. |
VREF | 12,13 | I | Current set reference input | Reference voltage for winding current set. Both pins must be connected together on the PCB. |
STATUS | ||||
nFAULT | 18 | OD | Fault | Logic low when in fault condition (overtemperature, overcurrent) |
OUTPUT | ||||
ISEN | 6, 9 | IO | Bridge ground / Isense | Connect to current sense resistor. Both pins must be connected together on the PCB. |
OUT1 | 5, 10 | O | Bridge output 1 | Connect to motor winding. Both pins must be connected together on the PCB. |
OUT2 | 7, 8 | O | Bridge output 2 | Connect to motor winding. Both pins must be connected together on the PCB. |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VM | Power supply voltage | –0.3 | 47 | V | |
Digital pin voltage | –0.5 | 7 | V | ||
VREF | Input voltage | –0.3 | 4 | V | |
ISENSEx pin voltage(3) | –0.8 | 0.8 | V | ||
Peak motor drive output current, t < 1 μS | Internally limited | A | |||
Continuous motor drive output current(4) | 0 | 5 | A | ||
Continuous total power dissipation | See Thermal Information | ||||
TJ | Operating virtual junction temperature | –40 | 150 | °C | |
TA | Operating ambient temperature | –40 | 85 | °C | |
Tstg | Storage temperature | –60 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V | |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VM | Motor power supply voltage(1) | 8.2 | 45 | V |
VREF | VREF input voltage(2) | 1 | 3.5 | V |
IV3P3 | V3P3OUT load current | 0 | 1 | mA |
fPWM | Externally applied PWM frequency | 0 | 100 | kHz |
THERMAL METRIC(1) | DRV8842 | UNIT | |
---|---|---|---|
PWP (HTSSOP) | |||
28 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 31.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 15.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 5.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 5.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES | ||||||
IVM | VM operating supply current | VM = 24 V, fPWM < 50 kHz | 5 | 8 | mA | |
IVMQ | VM sleep mode supply current | VM = 24 V | 10 | 20 | μA | |
VUVLO | VM undervoltage lockout voltage | VM rising | 7.8 | 8.2 | V | |
V3P3OUT REGULATOR | ||||||
V3P3 | V3P3OUT voltage | IOUT = 0 mA to 1 mA | 3.2 | 3.3 | 3.4 | V |
LOGIC-LEVEL INPUTS | ||||||
VIL | Input low voltage | 0.6 | 0.7 | V | ||
VIH | Input high voltage | 2.2 | 5.25 | V | ||
VHYS | Input hysteresis | 0.3 | 0.45 | 0.6 | V | |
IIL | Input low current | VIN = 0 | –20 | 20 | μA | |
IIH | Input high current | VIN = 3.3 V | 33 | 100 | μA | |
RPD | Internal pulldown resistance | 100 | kΩ | |||
nFAULT OUTPUT (OPEN-DRAIN OUTPUT) | ||||||
VOL | Output low voltage | IO = 5 mA | 0.5 | V | ||
IOH | Output high leakage current | VO = 3.3 V | 1 | μA | ||
DECAY INPUT | ||||||
VIL | Input low threshold voltage | For slow decay (brake) mode | 0 | 0.8 | V | |
VIH | Input high threshold voltage | For fast decay (coast) mode | 2 | V | ||
IIN | Input current | ±40 | μA | |||
RPU | Internal pullup resistance (to 3.3 V) | 130 | kΩ | |||
RPD | Internal pulldown resistance | 80 | kΩ | |||
H-BRIDGE FETS | ||||||
RDS(ON) | HS FET on resistance | VM = 24 V, IO = 1 A, TJ = 25°C | 0.1 | Ω | ||
VM = 24 V, IO = 1 A, TJ = 85°C | 0.13 | 0.16 | ||||
RDS(ON) | LS FET on resistance | VM = 24 V, IO = 1 A, TJ = 25°C | 0.1 | Ω | ||
VM = 24 V, IO = 1 A, TJ = 85°C | 0.13 | 0.16 | ||||
IOFF | Off-state leakage current | –40 | 40 | μA | ||
MOTOR DRIVER | ||||||
fPWM | Internal current control PWM frequency | 50 | kHz | |||
tBLANK | Current sense blanking time | 3.75 | μs | |||
tR | Rise time | 30 | 200 | ns | ||
tF | Fall time | 30 | 200 | ns | ||
PROTECTION CIRCUITS | ||||||
IOCP | Overcurrent protection trip level | 6 | A | |||
tTSD | Thermal shutdown temperature | Die temperature | 150 | 160 | 180 | °C |
CURRENT CONTROL | ||||||
IREF | VREF input current | VREF = 3.3 V | –3 | 3 | μA | |
VTRIP | ISENSE trip voltage | VREF = 3.3 V, 100% current setting | 635 | 660 | 685 | mV |
ΔITRIP | Current trip accuracy (relative to programmed value) |
VREF = 3.3 V, 5% current setting | –25% | 25% | ||
VREF = 3.3 V, 10% to 34% current setting | –15% | 15% | ||||
VREF = 3.3 V, 38% to 67% current setting | –10% | 10% | ||||
VREF = 3.3 V, 71% to 100% current setting | –5% | 5% | ||||
AISENSE | Current sense amplifier gain | Reference only | 5 | V/V |
The DRV8842 device is an integrated motor driver solution for printers, scanners, and other automated equipment applications. The device integrates a single NMOS H-bridge, charge pump, current sense, current regulation, and device protection circuitry. The DRV8842 device can be powered from a single voltage supply from 8.2 V to 45 V, and is capable of providing a continuous output current up to 5 A.
A simple PWM interface allows for easy interfacing to an external controller. A 5 bit current control scheme allows for up to 32 discrete current levels. The current regulation method is adjustable between slow, mixed, and fast decay.
The integrated protection circuits allow the device to monitor and protect against overcurrent, undervoltage, and overtemperature faults, which are all reported through a fault indication pin (nFAULT). A low-power sleep mode is integrated, which allows the system to lower power consumption when not driving the motor.
The DRV8842 contains one H-bridge motor driver with current-control PWM circuitry. A block diagram of the motor control circuitry is shown in Figure 5.
Note that there are multiple VM, ISEN, OUT, and VREF pins. All like-named pins must be connected together on the PCB.
The IN1 and IN2 input pins directly control the state of the OUT1 and OUT2 outputs. Either input can also be used for PWM control of the load. Table 1 shows the logic.
xIN1 | xIN2 | xOUT1 | xOUT2 |
---|---|---|---|
0 | 0 | L | L |
0 | 1 | L | H |
1 | 0 | H | L |
1 | 1 | H | H |
The control inputs have internal pulldown resistors of approximately 100 kΩ.
The maximum current through the load is regulated by a fixed-frequency PWM current regulation, or current chopping. When the H-bridge is enabled, current rises through the winding at a rate dependent on the DC voltage and inductance of the winding. Once the current hits the current chopping threshold, the bridge disables the current until the beginning of the next PWM cycle.
For DC motors, current regulation is used to limit the start-up and stall current of the motor. Speed control is typically performed by providing an external PWM signal to the xIN1 or xIN2 input pins.
If the current regulation feature is not needed, it can be disabled by connecting the ISENSE pins directly to ground and the VREF pins to V3P3.
The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor connected to the ISEN pin, multiplied by a factor of 5, with a reference voltage. The reference voltage is input from the VREF pin, and is scaled by a 5-bit DAC that allows current settings of zero to 100% in an approximately sinusoidal sequence.
The full-scale (100%) chopping current is calculated in Equation 1.
Example:
If a 0.25-Ω sense resistor is used and the VREFx pin is 2.5 V, the full-scale (100%) chopping current will be 2.5 V / (5 x 0.25 Ω) = 2 A.
Five input pins (I0 - I4) are used to scale the current in the bridge as a percentage of the full-scale current set by the VREF input pin and sense resistance. The I0 - I4 pins have internal pulldown resistors of approximately
100 kΩ. The function of the pins is shown in Table 2.
I[4..0] | RELATIVE CURRENT (% FULL-SCALE CHOPPING CURRENT) |
---|---|
0x00h | 0% |
0x01h | 5% |
0x02h | 10% |
0x03h | 15% |
0x04h | 20% |
0x05h | 24% |
0x06h | 29% |
0x07h | 34% |
0x08h | 38% |
0x09h | 43% |
0x0Ah | 47% |
0x0Bh | 51% |
0x0Ch | 56% |
0x0Dh | 60% |
0x0Eh | 63% |
0x0Fh | 67% |
0x10h | 71% |
0x11h | 74% |
0x12h | 77% |
0x13h | 80% |
0x14h | 83% |
0x15h | 86% |
0x16h | 88% |
0x17h | 90% |
0x18h | 92% |
0x19h | 94% |
0x1Ah | 96% |
0x1Bh | 97% |
0x1Ch | 98% |
0x1Dh | 99% |
0x1Eh | 100% |
0x1Fh | 100% |
During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM current chopping threshold is reached. This is shown in Figure 6 as case 1. The current flow direction shown indicates the state when the IN1 pin is high and the IN2 pin is low.
Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or slow decay.
In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to allow winding current to flow in a reverse direction. As the winding current approaches zero, the bridge is disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 6 as case 2.
In slow decay mode, winding current is re-circulated by enabling both of the low-side FETs in the bridge. This is shown in Figure 6 as case 3.
The DRV8842 supports fast decay, slow decay and a mixed decay mode. Slow, fast, or mixed decay mode is selected by the state of the DECAY pin - logic low selects slow decay, open selects mixed decay operation, and logic high sets fast decay mode. The DECAY pin has both an internal pullup resistor of approximately 130 kΩ and an internal pulldown resistor of approximately 80 kΩ. This sets the mixed decay mode if the pin is left open or undriven.
Mixed decay mode begins as fast decay, but at a fixed period of time (75% of the PWM cycle) switches to slow decay mode for the remainder of the fixed PWM period.
After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. Note that the blanking time also sets the minimum on time of the PWM.
The DRV8842 device is fully protected against undervoltage, overcurrent and overtemperature events.
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this analog current limit persists for longer than the OCP time, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. The device will remain disabled until either nRESET pin is applied, or VM is removed and re-applied.
Overcurrent conditions on both high and low side devices; i.e., a short to ground, supply, or across the motor winding will all result in an overcurrent shutdown. Overcurrent protection does not use the current sense circuitry used for PWM current control, and is independent of the ISENSE resistor value or VREF voltage.
If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be driven low. Once the die temperature has fallen to a safe level operation will automatically resume.
If at any time the voltage on the VM pins falls below the undervoltage lockout threshold voltage, all circuitry in the device will be disabled and internal logic will be reset. Operation will resume when VM rises above the UVLO threshold.
The nRESET pin, when driven active low, resets the internal logic. It also disables the H-bridge driver. All inputs are ignored while nRESET is active.
Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In this state all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time (approximately 1 ms) needs to pass before the motor driver becomes fully operational. Note that nRESET and nSLEEP have internal pulldown resistors of approximately 100 kΩ. These signals need to be driven to logic high for device operation.