SLVSGF5A May 2023 – December 2023 DRV8845
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM) | ||||||
IVM | VM operating supply current | nSLEEP = 1, IOUT = 0 mA, outputs on, PWM = 50 kHz, DC = 50% | 9 | 14 | mA | |
nSLEEP = 1, Outputs off | 3.5 | 4.5 | mA | |||
nSLEEP = 0 | 1.3 | 3 | μA | |||
tSLEEP | Sleep time | nSLEEP = 0 to sleep mode | 120 | μs | ||
tRESET | nSLEEP reset pulse | nSLEEP low to clear fault | 20 | 40 | μs | |
tWAKE | Wake-up time | nSLEEP = 1 to output transition | 0.62 | 0.8 | ms | |
tON | Turn-on time | VM > UVLO to output transition | 0.62 | 0.8 | ms | |
CHARGE PUMP (VCP, CP1, CP2) | ||||||
VVCP | VCP operating voltage | VVM > 6 V | VVM + 5 | V | ||
f(VCP) | Charge pump switching frequency | VVM > UVLO, nSLEEP = 1 | 380 | kHz | ||
LOGIC-LEVEL INPUTS | ||||||
VIL | Input logic-low voltage | 0 | 0.8 | V | ||
VIH | Input logic-high voltage | 2 | 5.5 | V | ||
VHYS | Input logic hysteresis | 140 | 270 | 400 | mV | |
IINL | Logic input low current | VIN = 0 V | -1 | 1 | μA | |
IINH | Logic input high current | VIN = 5 V | 30 | μA | ||
tPD | Propagation delay | PWM change to source on | 300 | 600 | 900 | ns |
PWM change to source off | 150 | 700 | ns | |||
PWM change to sink on | 300 | 600 | 900 | ns | ||
PWM change to sink off | 150 | 700 | ns | |||
MOTOR DRIVER OUTPUTS | ||||||
RDS(ONH) | High-side FET on resistance | TJ = 25 °C, IO = -1. 2 A | 450 | 550 | mΩ | |
TJ = 125 °C, IO = -1.2 A | 700 | 850 | mΩ | |||
TJ = 150 °C, IO = -1.2 A | 780 | 950 | mΩ | |||
RDS(ONL) | Low-side FET on resistance | TJ = 25 °C, IO = 1.2 A | 450 | 550 | mΩ | |
TJ = 125 °C, IO = 1.2 A | 700 | 850 | mΩ | |||
TJ = 150 °C, IO = 1.2 A | 780 | 950 | mΩ | |||
Vf | Body diode forward voltage | IO = ± 1.2 A | 1.2 | V | ||
IDSS | Output Leakage | Outputs, VOUT = 0 to VM | -2 | 7 | μA | |
tSR | Output rise/fall time | VM = 24V, IO = 1.2 A, Between 10% and 90% | 100 | ns | ||
tD | Dead time | 90 | 425 | 600 | ns | |
tBLANK | Current sense blanking time ((1)) | 1 | μs | |||
PWM CURRENT CONTROL (VREFx) | ||||||
IVREFx | VREFx pin reference input Current | VREF = 1.5 V | -1 | 1 | μA | |
tOFF | PWM off-time | 16 | μs | |||
ΔITRIP | Current trip accuracy | VVREFx = 1.5 V, phase current = 100% | –2 | 2 | % | |
VVREFx = 1.5 V, phase current = 67% | –3 | 3 | ||||
VVREFx = 1.5 V, phase current = 33% | -7 | 7 | ||||
PROTECTION CIRCUITS | ||||||
VMUVLO | VM UVLO threshold | VM falling | 4.1 | 4.25 | 4.35 | V |
VM rising | 4.2 | 4.34 | 4.45 | |||
VMUVLO,HYS | VM UVLO hysteresis | Rising to falling threshold | 90 | mV | ||
VCPUV | Charge pump undervoltage | VCP falling | VVM + 2 | V | ||
IOCP | Overcurrent protection | Current through any FET | 2.5 | A | ||
tOCP | Overcurrent deglitch time | 2.1 | μs | |||
TOTSD | Thermal shutdown | Die temperature TJ | 155 | 165 | 175 | °C |
THYS_OTSD | Thermal shutdown hysteresis | Die temperature TJ | 20 | °C |
Guaranteed by design.