SLVSE65C July 2018 – December 2023 DRV8847
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VM) | ||||||
IVM | VM operating supply current | VM = 2.7 V; nSLEEP = 1; INX = 0 | 2 | 2.5 | mA | |
VM = 5 V; nSLEEP = 1; INX = 0 | 3 | 3.5 | mA | |||
VM = 12 V; nSLEEP = 1; INX = 0 | 3 | 3.5 | mA | |||
IVMQ | VM sleep mode current | VM = 2.7 V; nSLEEP = 0; TA = 25°C | 0.1 | µA | ||
VM = 2.7 V; nSLEEP = 0; TA = 85°C | 0.5 | µA | ||||
VM = 5 V; nSLEEP = 0; TA = 25°C | 0.2 | µA | ||||
VM = 5 V; nSLEEP = 0; TA = 85°C | 1 | µA | ||||
VM = 12 V; nSLEEP = 0; TA = 25°C | 1.7 | µA | ||||
VM = 12 V; nSLEEP = 0; TA = 85°C | 2.5 | µA | ||||
tSLEEP | Sleep time | nSLEEP = 0 to sleep mode | 2 | µs | ||
tWAKE | Wake-up time | nSLEEP = 1 to output transition | 1.5 | ms | ||
tON | Turnon-time | VM > UVLO to output transition (nSLEEP = 1) | 1.5 | ms | ||
LOGIC-LEVEL INPUTS (IN1, IN2, IN3, IN4, NSLEEP, TRQ, SCL, SDA) | ||||||
VIL | Input logic low voltage | VM < 7 V | 0 | 0.6 | V | |
VM >= 7 V (1) | 0 | 1.0 | V | |||
VIH | Input logic high voltage | 1.6 | 5.5 | V | ||
VHYS | Input logic hysteresis | nSLEEP pin | 40 | mV | ||
VHYS | Input logic hysteresis | IN1, IN2, IN3, IN4, TRQ, SCL pins | 100 | mV | ||
VIL | nSLEEP | 0 | 0.6 | V | ||
VIH | nSLEEP | 1.6 | 5.5 | V | ||
VHYS | nSLEEP | 40 | mV | |||
IIL | Input logic low current | VIN = 0 V | -1 | 1 | µA | |
IIH | Input logic high current | IN1, IN2, IN3, IN4, TRQ, VIN = 5 V | 18 | 35 | µA | |
nSLEEP, VIN = minimum (VM, 5 V) | 10 | 25 | µA | |||
tPD | Propagation Delay | INx edge to output | 100 | 400 | 600 | ns |
tDEGLITCH | Input logic deglitch | 50 | ns | |||
TRI-LEVEL INPUTS (MODE) | ||||||
VIL | Tri-level input logic low voltage | 0 | 0.6 | V | ||
VIZ | Tri-level input hi-Z voltage | 1.2 | V | |||
VIH | Tri-level input logic high voltage | 1.6 | 5.5 | V | ||
IIL | Tri-level input logic low current | VIN = 0 V | -9 | -4 | µA | |
IIH | Tri-level input logic high current | VIN = 5 V | 8 | 25 | µA | |
OPEN-DRAIN OUTPUTS (nFAULT) | ||||||
VOL | Output logic low voltage | IOD = 5 mA | 0.5 | V | ||
IOH | Output logic high current | VOD = 3.3 V | -1 | 1 | µA | |
OPEN-DRAIN OUTPUTS (SDA) | ||||||
VOL | Output logic low voltage | IOD = 5 mA | 0.5 | V | ||
IOH | Output logic high current | VOD = 3.3 V | -1 | 1 | µA | |
CB | Capacitive load for each bus line | 400 | pF | |||
DRIVER OUTPUTS (OUT1, OUT2, OUT3, OUT4) | ||||||
RDS(ON)_HS | High-side MOSFET on resistance | VVM = 2.7 V; IOUT = 0.5 A; TA = 25°C | 690 | mΩ | ||
VVM = 2.7 V; IOUT = 0.5 A; TA = 85°C | 950 | mΩ | ||||
VVM = 5 V; IOUT = 0.5 A; TA = 25°C | 530 | mΩ | ||||
VVM = 5 V; IOUT = 0.5 A; TA = 85°C | 740 | mΩ | ||||
VVM = 12 V; IOUT = 0.5 A; TA = 25°C | 520 | mΩ | ||||
VVM = 12 V; IOUT = 0.5 A; TA = 85°C | 700 | mΩ | ||||
RDS(ON)_LS | Low-side MOSFET on resistance | VVM = 2.7 V; IOUT = 0.5 A; TA = 25°C | 570 | mΩ | ||
VVM = 2.7 V; IOUT = 0.5 A; TA = 85°C | 900 | mΩ | ||||
VVM = 5 V; IOUT = 0.5 A; TA = 25°C | 460 | mΩ | ||||
VVM = 5 V; IOUT = 0.5 A; TA = 85°C | 690 | mΩ | ||||
VVM = 12 V; IOUT = 0.5 A; TA = 25°C | 450 | mΩ | ||||
VVM = 12 V; IOUT = 0.5 A; TA = 85°C | 680 | mΩ | ||||
IOFF | Off-state leakage current | VVM = 5 V; TJ = 25 °C; VOUT = 0 V | -1 | 1 | µA | |
tRISE | Output rise time | VVM = 12 V; IOUT = 0.5 A | 150 | ns | ||
tFALL | Output fall time | VVM = 12 V, IOUT = 0.5 A | 150 | ns | ||
tDEAD | Output dead time | Internal dead time | 200 | ns | ||
VSD | Body diode forward voltage | IOUT = 0.5 A | 1.1 | V | ||
PWM CURRENT CONTROL (ISEN12, SEN34) | ||||||
VTRIP | ISENxx trip voltage | Torque at 100% (TRQ = 0) | 140 | 150 | 160 | mV |
Torque at 50% (TRQ = 1) | 63.75 | 75 | 86.25 | mV | ||
tBLANK | Current sense blanking time | 1.8 | µs | |||
tOFF | Current control constant off time | 20 | µs | |||
PROTECTION CIRCUITS | ||||||
VUVLO | Supply undervoltage lockout | Supply rising | 2.7 | V | ||
Supply falling | 2.4 | V | ||||
VUVLO_HYS | Supply undervoltage hysteresis | Rising to falling theshold | 50 | mV | ||
tUVLO | Supply undervoltage deglitch time | VM falling; UVLO report | 10 | µs | ||
IOCP | Overcurrent protection trip point (2) | 1.6 | 2 | A | ||
tOCP | Overcurrent protection deglitch time | VVM < 15 V | 3 | µs | ||
VVM >= 15 V | 1 | µs | ||||
tRETRY | Overcurrent protection retry time | 1 | ms | |||
IOL_PU | Open load pull up current | < 15 nF on OUTx Pin, VVM = 2.7 V | 100 | µA | ||
IOL_PU | Open load pull-up current | < 15 nF on OUTx Pin | 200 | µA | ||
IOL_PD | Open load pull down current | < 15 nF on OUTx Pin, VVM = 2.7 V | 130 | µA | ||
IOL_PD | Open load pull-down current | < 15 nF on OUTx Pin | 230 | µA | ||
IOL | Open load pull up and pull down current | 230 | µA | |||
VOL_HS | Open load detect threshold (high side) | VVM = 2.7 V | 1.3 | V | ||
VOL_HS | Open load detect threshold (high side) | 2.3 | V | |||
VOL_LS | Open load detect threshold (low side) | VVM = 2.7 V | 0.67 | V | ||
VOL_LS | Open load detect threshold (low side) | 1.2 | V | |||
VOL | Open load detect threshold voltage | 1.1 | V | |||
TTSD | Thermal shutdown temperature | 150 | 160 | 180 | °C | |
THYS | Thermal shutdown hysteresis | 40 | °C | |||
Vb_BJT_27C | Base voltage of BJT in OTS (Testpad out at 12V supply) |