SLIS175 November 2016 DRV8872-Q1
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLY (VM) | ||||||
VVM | VM operating voltage | 6.8 | 45 | V | ||
IVM | VM operating supply current | 3 | 10 | mA | ||
IVMSLEEP | VM sleep current | VM = 12 V | 13 | µA | ||
tON | Turnon time(1) | VM > VUVLO with IN1 or IN2 high | 40 | 50 | µs | |
LOGIC-LEVEL INPUTS (IN1, IN2) | ||||||
VIL | Input logic low voltage | 0.5 | V | |||
VIH | Input logic high voltage | 1.6 | V | |||
VHYS | Input logic hysteresis | 0.5 | V | |||
IIL | Input logic low current | VIN = 0 V | –1 | 1 | μA | |
IIH | Input logic high current | VIN = 3.3 V | 33 | 100 | μA | |
RPD | Pulldown resistance | To GND | 100 | kΩ | ||
tPD | Propagation delay | INx to OUTx change (see Figure 6) | 0.7 | 1 | μs | |
tsleep | Time to sleep | Inputs low to sleep | 1 | 1.5 | ms | |
MOTOR DRIVER OUTPUTS (OUT1, OUT2) | ||||||
RDS(ON) | High-side FET on resistance | VM = 24 V, I = 1 A, fPWM = 25 kHz | 307 | 610 | mΩ | |
RDS(ON) | Low-side FET on resistance | VM = 24 V, I = 1 A, fPWM = 25 kHz | 258 | 500 | mΩ | |
tDEAD | Output dead time | 250 | ns | |||
Vd | Body diode forward voltage | IOUT = 1 A | 0.8 | 1 | V | |
CURRENT REGULATION | ||||||
VTRIP | ISEN voltage for current chopping | 0.32 | 0.35 | 0.38 | V | |
tOFF | PWM off-time | 25 | μs | |||
tBLANK | PWM blanking time | 2 | µs | |||
PROTECTION CIRCUITS | ||||||
VUVLO | VM undervoltage lockout | VM falls until UVLO triggers | 6.3 | 6.5 | V | |
VM rises until operation recovers | 6.4 | 6.7 | ||||
VUV,HYS | VM undervoltage hysteresis | Rising to falling threshold | 100 | 180 | mV | |
IOCP | Overcurrent protection trip level | 3.7 | 4.5 | 6.6 | A | |
tOCP | Overcurrent deglitch time | 2 | μs | |||
tRETRY | Overcurrent retry time | 3 | ms | |||
TSD | Thermal shutdown temperature(2) | 155 | 180 | °C | ||
THYS | Thermal shutdown hysteresis(2) | 40 | °C | |||
nFAULT OPEN DRAIN OUTPUT | ||||||
VOL | Output low voltage | IO = 5 mA | 0.5 | V | ||
IOH | Output high leakage current | VO = 3.3 V | 1 | µA |