SLVSDS7B August 2019 – November 2019 DRV8876
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VCP, VM) | ||||||
IVMQ | VM sleep mode current | VVM = 24 V, nSLEEP = 0 V, TJ = 25°C | 0.75 | 1 | µA | |
nSLEEP = 0 V | 5 | µA | ||||
IVM | VM active mode current | VVM = 24 V, nSLEEP = 5 V,
EN/IN1 = PH/IN2 = 0 V |
3 | 7 | mA | |
tWAKE | Turnon time | VVM > VUVLO, nSLEEP = 5 V to active | 1 | ms | ||
tSLEEP | Turnoff time | nSLEEP = 0 V to sleep mode | 1 | ms | ||
VVCP | Charge pump regulator voltage | VCP with respect to VM, VVM = 24 V | 5 | V | ||
fVCP | Charge pump switching frequency | 400 | kHz | |||
LOGIC-LEVEL INPUTS (EN/IN1, PH/IN2, nSLEEP) | ||||||
VIL | Input logic low voltage | VVM < 5 V | 0 | 0.7 | V | |
VVM ≥ 5 V | 0 | 0.8 | ||||
VIH | Input logic high voltage | 1.5 | 5.5 | V | ||
VHYS | Input hysteresis | 200 | mV | |||
nSLEEP | 50 | mV | ||||
IIL | Input logic low current | VI = 0 V | –5 | 5 | µA | |
IIH | Input logic high current | VI = 5 V | 50 | 75 | µA | |
RPD | Input pulldown resistance | To GND | 100 | kΩ | ||
TRI-LEVEL INPUTS (PMODE) | ||||||
VTIL | Tri-level input logic low voltage | 0 | 0.65 | V | ||
VTIZ | Tri-level input Hi-Z voltage | 0.9 | 1.1 | 1.2 | V | |
VTIH | Tri-level input logic high voltage | 1.5 | 5.5 | V | ||
ITIL | Tri-level input logic low current | VI = 0 V | –50 | –32 | µA | |
ITIZ | Tri-level input Hi-Z current | VI = 1.1 V | –5 | 5 | µA | |
ITIH | Tri-level input logic high current | VI = 5 V | 113 | 150 | µA | |
RTPD | Tri-level pulldown resistance | To GND | 44 | kΩ | ||
RTPU | Tri-level pullup resistance | To internal 5 V | 156 | kΩ | ||
QUAD-LEVEL INPUTS (IMODE) | ||||||
VQI2 | Quad-level input level 1 | Voltage to set quad-level 1 | 0 | 0.45 | V | |
RQI2 | Quad-level input level 2 | Resistance to GND to set quad-level 2 | 18.6 | 20 | 21.4 | kΩ |
RQI3 | Quad-level input level 3 | Resistance to GND to set quad-level 3 | 57.6 | 62 | 66.4 | kΩ |
VQI4 | Quad-level input level 4 | Voltage to set quad-level 4 | 2.5 | 5.5 | V | |
RQPD | Quad-level pulldown resistance | To GND | 136 | kΩ | ||
RQPU | Quad-level pullup resistance | To internal 5 V | 68 | kΩ | ||
OPEN-DRAIN OUTPUTS (nFAULT) | ||||||
VOL | Output logic low voltage | IOD = 5 mA | 0.3 | V | ||
IOZ | Output logic high current | VOD = 5 V | –2 | 2 | µA | |
DRIVER OUTPUTS (OUT1, OUT2) | ||||||
RDS(on)_HS | High-side MOSFET on resistance | VVM = 24 V, IO = 1 A, TJ = 25°C | 350 | 420 | mΩ | |
RDS(on)_LS | Low-side MOSFET on resistance | VVM = 24 V, IO = –1 A, TJ = 25°C | 350 | 420 | mΩ | |
VSD | Body diode forward voltage | ISD = 1 A | 0.9 | V | ||
tRISE | Output rise time | VVM = 24 V, OUTx rising 10% to 90% | 150 | ns | ||
tFALL | Output fall time | VVM = 24 V, OUTx falling 90% to 10% | 150 | ns | ||
tPD | Input to output propagation delay | EN/IN1, PH/IN2 to OUTx, 200 Ω from OUTx to GND | 650 | ns | ||
tDEAD | Output dead time | Body diode conducting | 300 | ns | ||
CURRENT SENSE AND REGULATION (IPROPI, VREF) | ||||||
AIPROPI | Current mirror scaling factor | 1000 | µA/A | |||
AERR(1) | Current mirror scaling error | IOUT < 0.15 A,
5.5 V ≤ VVM ≤ 37 V |
–7.5 | 7.5 | mA | |
0.15 A ≤ IOUT < 0.5 A,
5.5 V ≤ VVM ≤ 37 V |
–5 | 5 | % | |||
0.5 A ≤ IOUT ≤ 2 A, 5.5 V ≤ VVM ≤ 37 V,
PWP, –40℃ ≤ TJ < 125℃ |
–4 | 4 | ||||
0.5 A ≤ IOUT ≤ 2 A, 5.5 V ≤ VVM ≤ 37 V,
PWP, 125℃ ≤ TJ ≤ 150℃ |
–5 | 5 | ||||
0.5 A ≤ IOUT ≤ 2 A, 5.5 V ≤ VVM ≤ 37 V, RGT | –6.5 | 6.5 | ||||
tOFF | Current regulation off time | 25 | µs | |||
tDELAY | Current sense delay time | 1.6 | µs | |||
tDEG | Current regulation deglitch time | 0.6 | µs | |||
tBLK | Current regulation blanking time | 1.1 | µs | |||
PROTECTION CIRCUITS | ||||||
VUVLO | Supply undervoltage lockout (UVLO) | VVM rising | 4.3 | 4.45 | 4.6 | V |
VVM falling | 4.2 | 4.35 | 4.5 | V | ||
VUVLO_HYS | Supply UVLO hysteresis | 100 | mV | |||
tUVLO | Supply undervoltage deglitch time | 10 | µs | |||
VCPUV | Charge pump undervoltage lockout | VCP with respect to VM, VVCP falling | 2.25 | V | ||
IOCP | Overcurrent protection trip point | 3.5 | 5.5 | A | ||
tOCP | Overcurrent protection deglitch time | 3 | µs | |||
tRETRY | Overcurrent protection retry time | 2 | ms | |||
TTSD | Thermal shutdown temperature | 160 | 175 | 190 | °C | |
THYS | Thermal shutdown hysteresis | 20 | °C |