SLVSDS7B August   2019  – November 2019 DRV8876

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 External Components
      2. 7.3.2 Control Modes
        1. 7.3.2.1 PH/EN Control Mode (PMODE = Logic Low)
        2. 7.3.2.2 PWM Control Mode (PMODE = Logic High)
        3. 7.3.2.3 Independent Half-Bridge Control Mode (PMODE = Hi-Z)
      3. 7.3.3 Current Sense and Regulation
        1. 7.3.3.1 Current Sensing
        2. 7.3.3.2 Current Regulation
          1. 7.3.3.2.1 Fixed Off-Time Current Chopping
          2. 7.3.3.2.2 Cycle-By-Cycle Current Chopping
      4. 7.3.4 Protection Circuits
        1. 7.3.4.1 VM Supply Undervoltage Lockout (UVLO)
        2. 7.3.4.2 VCP Charge Pump Undervoltage Lockout (CPUV)
        3. 7.3.4.3 OUTx Overcurrent Protection (OCP)
        4. 7.3.4.4 Thermal Shutdown (TSD)
        5. 7.3.4.5 Fault Condition Summary
      5. 7.3.5 Pin Diagrams
        1. 7.3.5.1 Logic-Level Inputs
        2. 7.3.5.2 Tri-Level Inputs
        3. 7.3.5.3 Quad-Level Inputs
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active Mode
      2. 7.4.2 Low-Power Sleep Mode
      3. 7.4.3 Fault Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Primary Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Current Sense and Regulation
          2. 8.2.1.2.2 Power Dissipation and Output Current Capability
          3. 8.2.1.2.3 Thermal Performance
            1. 8.2.1.2.3.1 Steady-State Thermal Performance
            2. 8.2.1.2.3.2 Transient Thermal Performance
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Alternative Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Current Sense and Regulation
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 HTSSOP Layout Example
      2. 10.2.2 VQFN Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGT|16
  • PWP|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.4.4 Thermal Shutdown (TSD)

If the die temperature exceeds the overtemperature limit TTSD, all MOSFET in the H-bridge will be disabled and the nFAULT pin driven low. Normal operation will resume when the overtemperature condition is removed and the die temperature drops below the TTSD threshold.