SLVSEC9C September 2019 – February 2020 DRV8904-Q1 , DRV8906-Q1 , DRV8908-Q1 , DRV8910-Q1 , DRV8912-Q1
PRODUCTION DATA.
The device is fully protected for any cross conduction of MOSFETs. In half-bridge configuration, the operation of high-side and low-side MOSFETs are ensured to avoid any shoot through currents by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensured that VGS of high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of same half-bridge as shown in Figure 48 and Figure 49.