SNLS340E November 2011 – November 2015 DS100KR800
PRODUCTION DATA.
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
DIFFERENTIAL HIGH SPEED INPUTS AND OUTPUTS | |||
IN_A_0+, IN_A_0-, IN_A_1+, IN_A_1-, IN_A_2+, IN_A_2-, IN_A_3+, IN_A_3- |
10, 11, 12, 13, 15, 16, 17, 18 |
I | Inverting and noninverting differential inputs to bank A equalizer. A gated on-chip 50-Ω termination resistor connects INA_n+ to VDD and INA_n- to VDD when enabled. AC coupling required on high-speed I/O. |
IN_B_0+, IN_B_0-, IN_B_1+, IN_B_1-, IN_B_2+, IN_B_2-, IN_B_3+, IN_B_3-, |
1, 2, 3, 4, 5, 6, 7, 8 |
I | Inverting and noninverting differential inputs to bank B equalizer. A gated on-chip 50-Ω termination resistor connects INB_n+ to VDD and INB_n- to VDD when enabled. AC coupling required on high-speed I/O. |
OUT_A_0+, OUT_A_0-, OUT_A_1+, OUT_A_1-, OUT_A_2+, OUT_A_2-, OUT_A_3+, OUT_A_3- |
35, 34, 33, 32, 31, 30, 29, 28 |
O | Inverting and noninverting 50-Ω driver bank A outputs with de-emphasis. Compatible with AC-coupled CML inputs. AC coupling required on high-speed I/O. |
OUT_B_0+, OUT_B_0-, OUT_B_1+, OUT_B_1-, OUT_B_2+, OUT_B_2-, OUT_B_3+, OUT_B_3-, |
45, 44, 43, 42, 40, 39, 38, 37 |
O | Inverting and noninverting 50-Ω driver bank B outputs with de-emphasis. Compatible with AC-coupled CML inputs. AC coupling required on high-speed I/O. |
CONTROL PINS — SHARED (LVCMOS) | |||
ENSMB | 48 | I, LVCMOS | System Management Bus (SMBus) enable pin Tie 1 kΩ to VDD = Register Access SMBus Slave mode FLOAT = Read External EEPROM (Master SMBUS Mode) Tie 1 kΩ to GND = Pin Mode |
CONTROL PINS — BOTH PIN AND SMBus MODES (LVCMOS) | |||
RESET | 52 | I, LVCMOS | LOW = Device is enabled (Normal Operation) HIGH = Low Power Mode |
VDD_SEL | 25 | I, FLOAT | Controls the internal regulator Float = 2.5-V mode Tie GND = 3.3-V mode |
POWER | |||
GND | DAP | Power | Ground pad (DAP - die attach pad). |
VDD | 9, 14, 36, 41, 51 | Power | Power supply pins CML/analog 2.5-V mode, connect to 2.5 V 3.3-V mode, connect 0.1-µF cap to each VDD pin |
VIN | 24 | Power | In 3.3-V mode, feed 3.3 V to VIN In 2.5-V mode, leave floating. |
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
ENSMB = 1 (SMBUS MODE) | |||
AD0-AD3 | 54, 53, 47, 46 | I, LVCMOS | ENSMB master or slave mode User set SMBus Slave Address Inputs in SMBus mode. |
READ_EN | 26 | I, 4-LEVEL, LVCMOS |
When using an external EEPROM, a transition from high to low starts the load from the external EEPROM |
SCL | 50 | I, LVCMOS, O, OPEN-Drain |
ENSMB master or slave mode SMBUS clock input pin is enabled. Clock output when loading EEPROM configuration (master mode). |
SDA | 49 | I, LVCMOS, O, OPEN-Drain |
ENSMB master or slave mode The SMBus bidirectional SDA pin is enabled. Data input or open-drain output. |
ENSMB = 0 (PIN MODE) | |||
MODE | 21 | I, 4-LEVEL, LVCMOS |
Tie 1 kΩ to VDD = 10G-KR mode operation Tie 1 kΩ to GND = 10G mode operation |
SD_TH | 26 | I, 4-LEVEL, LVCMOS |
Controls the internal signal detect threshold See Table 4 |
CONTROL PINS — BOTH PIN AND SMBus MODES (LVCMOS) | |||
INPUT_EN | 22 | I, 4-LEVEL, LVCMOS |
Tie 1 kΩ to VDD = normal operation |
OUTPUTS | |||
ALL_DONE | 27 | O, LVCMOS | Valid register load status output HIGH = external EEPROM load failed LOW = external EEPROM load passed |
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
ENSMB = 0 (PIN MODE) | |||
DEMA0, DEMA1, DEMB0, DEMB1 | 49, 50, 53, 54 | I, 4-LEVEL, LVCMOS |
DEMA[1:0] and DEMB[1:0] control the level of de-emphasis of the output driver when in Gen1/2 mode. The pins are only active when ENSMB is deasserted (low). The 8 channels are organized into two banks. Bank A is controlled with the DEMA [1:0] pins and bank B is controlled with the DEMB[1:0] pins. When ENSMB is high the SMBus registers provide independent control of each channel. The DEMA[1:0] pins are converted to SMBUS SCL/SDA and DEMB[1:0] pins are converted to AD0, AD1 inputs. See Table 3 |
EQA0, EQA1, EQB0, EQB1 |
20, 19, 46, 47 | I, 4-LEVEL, LVCMOS |
EQA[1:0] and EQB[1:0] control the level of equalization on the input pins. The pins are active only when ENSMB is deasserted (low). The 8 channels are organized into two banks. Bank A is controlled with the EQA[1:0] pins and bank B is controlled with the EQB[1:0] pins. When ENSMB is high the SMBus registers provide independent control of each channel. The EQB[1:0] pins are converted to SMBUS AD2/ AD3 inputs. See Table 2 |
MODE | 21 | I, 4-LEVEL, LVCMOS |
Tie 1 kΩ to VDD = 10G-KR mode operation Tie 1 kΩ to GND = 10G mode operation |
SD_TH | 26 | I, 4-LEVEL, LVCMOS |
Controls the internal signal detect threshold See Table 4 |
CONTROL PINS — BOTH PIN AND SMBus MODES (LVCMOS) | |||
INPUT_EN | 22 | I, 4-LEVEL, LVCMOS |
Tie 1 kΩ to VDD = normal operation |
RESERVED | 23 | I, FLOAT | Float = normal operation |